Author Affiliations
1 College of Opto-Electronics Engineering, Changchun University of Science and Technology, Changchun, Jilin 130022, China1 State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, Chinashow less
Fig. 1. Optical micrographs with the gold film thickness of (a) 3 nm, (b) 6 nm, (c) 8 nm, (d) 10 nm, while the annealing temperature is 570 ℃ and the annealing time is 210 s
Fig. 2. Optical micrographs with the annealing temperature of (a) 500 ℃, (b) 550 ℃, (c) 570 ℃, (d) 600 ℃ while the gold film thickness is 10 nm
Fig. 3. Optical micrographs with the annealing time of (a) 0 s, (b) 180 s, (c) 210 s, (d) 240 s, while the gold film thickness is 10 nm and the annealing temperature is 570 ℃
Fig. 4. SEM images with the annealing time of (a) 0 s, (b) 180 s, (c) 210 s, (d) 240 s, while the gold film thickness is 10 nm and the annealing temperature is 570 ℃
Fig. 5. (a) SEM image and (b) AFM image of the ITO surfaces etched for 4 min, while the annealing time is 240 s
Fig. 6. Transmittance of the ITO with different etching time
Fig. 7. Current density-voltage curves
Fig. 8. Luminance-voltage curves
Fig. 9. Power efficiency-luminance curves
Fig. 10. Current efficiency-luminance curves
Fig. 11. EL spectra