• Laser & Optoelectronics Progress
  • Vol. 55, Issue 2, 022301 (2018)
Xiaoxiang Lu1, Yong Wang1、*, Xiaomei Han1, and Zhanguo Li1
Author Affiliations
  • 1 College of Opto-Electronics Engineering, Changchun University of Science and Technology, Changchun, Jilin 130022, China
  • 1 State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun, Jilin 130022, China
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    DOI: 10.3788/LOP55.022301 Cite this Article Set citation alerts
    Xiaoxiang Lu, Yong Wang, Xiaomei Han, Zhanguo Li. Study on Light Extraction Efficiency of Enhanced OLED with Nanopatterns[J]. Laser & Optoelectronics Progress, 2018, 55(2): 022301 Copy Citation Text show less
    Optical micrographs with the gold film thickness of (a) 3 nm, (b) 6 nm, (c) 8 nm, (d) 10 nm, while the annealing temperature is 570 ℃ and the annealing time is 210 s
    Fig. 1. Optical micrographs with the gold film thickness of (a) 3 nm, (b) 6 nm, (c) 8 nm, (d) 10 nm, while the annealing temperature is 570 ℃ and the annealing time is 210 s
    Optical micrographs with the annealing temperature of (a) 500 ℃, (b) 550 ℃, (c) 570 ℃, (d) 600 ℃ while the gold film thickness is 10 nm
    Fig. 2. Optical micrographs with the annealing temperature of (a) 500 ℃, (b) 550 ℃, (c) 570 ℃, (d) 600 ℃ while the gold film thickness is 10 nm
    Optical micrographs with the annealing time of (a) 0 s, (b) 180 s, (c) 210 s, (d) 240 s, while the gold film thickness is 10 nm and the annealing temperature is 570 ℃
    Fig. 3. Optical micrographs with the annealing time of (a) 0 s, (b) 180 s, (c) 210 s, (d) 240 s, while the gold film thickness is 10 nm and the annealing temperature is 570 ℃
    SEM images with the annealing time of (a) 0 s, (b) 180 s, (c) 210 s, (d) 240 s, while the gold film thickness is 10 nm and the annealing temperature is 570 ℃
    Fig. 4. SEM images with the annealing time of (a) 0 s, (b) 180 s, (c) 210 s, (d) 240 s, while the gold film thickness is 10 nm and the annealing temperature is 570 ℃
    (a) SEM image and (b) AFM image of the ITO surfaces etched for 4 min, while the annealing time is 240 s
    Fig. 5. (a) SEM image and (b) AFM image of the ITO surfaces etched for 4 min, while the annealing time is 240 s
    Transmittance of the ITO with different etching time
    Fig. 6. Transmittance of the ITO with different etching time
    Current density-voltage curves
    Fig. 7. Current density-voltage curves
    Luminance-voltage curves
    Fig. 8. Luminance-voltage curves
    Power efficiency-luminance curves
    Fig. 9. Power efficiency-luminance curves
    Current efficiency-luminance curves
    Fig. 10. Current efficiency-luminance curves
    EL spectra
    Fig. 11. EL spectra
    Xiaoxiang Lu, Yong Wang, Xiaomei Han, Zhanguo Li. Study on Light Extraction Efficiency of Enhanced OLED with Nanopatterns[J]. Laser & Optoelectronics Progress, 2018, 55(2): 022301
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