• Journal of Infrared and Millimeter Waves
  • Vol. 40, Issue 5, 634 (2021)
Bin NIU1、2、*, Jun QIAN1、3, Dao-Yu FAN1, Yuan-Qing WANG1、3, Liang MEI1、3, Jun-Jie DAI1、3, Ming ZHOU1、2, Tang-Sheng CHEN1, and Tangsheng Chen1、2
Author Affiliations
  • 1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing 210016,China
  • 2Nanjing Chip Valley Industrial Technology Institute,Nanjing 210016,China
  • 3Nanjing Antaixin Electornic Co. Ltd.,Nanjing 210016,China
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    DOI: 10.11972/j.issn.1001-9014.2021.05.009 Cite this Article
    Bin NIU, Jun QIAN, Dao-Yu FAN, Yuan-Qing WANG, Liang MEI, Jun-Jie DAI, Ming ZHOU, Tang-Sheng CHEN, Tangsheng Chen. 664 GHz sub harmonic mixer based on “T” anode GaAs SBD membrane circuit[J]. Journal of Infrared and Millimeter Waves, 2021, 40(5): 634 Copy Citation Text show less
    “T” shape anode of GaAs SBD: (a) schematic picture with Cjp and Cj0; (b) SEM picture of 0.5 μm anode metal section.
    Fig. 1. “T” shape anode of GaAs SBD: (a) schematic picture with Cjp and Cj0; (b) SEM picture of 0.5 μm anode metal section.
    Characteristics of “T” shape anode GaAs SBD with different anode size: (a)Cj0, Cjp and 1/Rs versus anode area; (b)ft versus anode diameter.
    Fig. 2. Characteristics of “T” shape anode GaAs SBD with different anode size: (a)Cj0, Cjp and 1/Rs versus anode area; (b)ft versus anode diameter.
    GaAs membrane sub harmonic mixer design: (a) 3D design diagram; (b) microscope picture of the finished mixer.
    Fig. 3. GaAs membrane sub harmonic mixer design: (a) 3D design diagram; (b) microscope picture of the finished mixer.
    Pictures of 664GHz receiver (a) and measurement setup (b)
    Fig. 4. Pictures of 664GHz receiver (a) and measurement setup (b)
    Measured and simulated DSB conversion loss of the membrane mixer
    Fig. 5. Measured and simulated DSB conversion loss of the membrane mixer
    Layer functionMaterialDopingThickness
    Schottky contactGaAsn-,1e17cm-3100nm
    Ohmic contactGaAsn+,7e18cm-31μm
    MembraneGaAsnid5μm
    Etch-stopAlGaAsnid50nm
    SubstrateGaAsS.I./
    Table 1. Epitaxy layer structure of GaAs SBD membrane circuit
    Bin NIU, Jun QIAN, Dao-Yu FAN, Yuan-Qing WANG, Liang MEI, Jun-Jie DAI, Ming ZHOU, Tang-Sheng CHEN, Tangsheng Chen. 664 GHz sub harmonic mixer based on “T” anode GaAs SBD membrane circuit[J]. Journal of Infrared and Millimeter Waves, 2021, 40(5): 634
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