Based on the process of combining atomic layer deposition and focused ion beam cutting and polishing， a multi-layer film-type wave zone plate preparation technology was proposed. Firstly， using the coupled wave theory， it is calculated that the outermost ring width of Al₂O₃/HfO₂， Al₂O₃/SiO₂， Al₂O₃/Ir and Al₂O₃/Ta₂O₅ four material combinations of multi-layer film band plates with X-ray energy of 8 keV and the theoretical diffraction efficiency of the Fresnel zone plate at 15 keV. The influence of the width of the outermost ring and the height of the zone plate on the diffraction efficiency was discussed， and Al₂O₃/HfO₂ was selected as the subsequent laminate preparation. The growth characteristics of Al₂O₃ and HfO₂ films prepared by atomic layer deposition were studied， and the feasibility of preparing single-layer film thickness of 10 nm by atomic layer deposition technology was verified. The experimental results showed that the preparation of Al₂O₃ and HfO₂ films by atomic layer deposition technology was rough The degree of control is 1 nm， the uniformity is better than 1.5%， and the thickness error of the single stack is only 0.416 nm. At the same time， a high-resolution X-ray Fresnel zone plate with an outermost ring width of 10 nm and an aspect ratio of 200 was obtained using focused ion beam cutting and polishing technology.