• Microelectronics
  • Vol. 52, Issue 1, 120 (2022)
WANG Songyan, FAN Xiaomei, ZHU Zhihua, ZHANG Yingtao, WANG Yao, LIOU Junjie, and CHEN Ruike
Author Affiliations
  • [in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210230 Cite this Article
    WANG Songyan, FAN Xiaomei, ZHU Zhihua, ZHANG Yingtao, WANG Yao, LIOU Junjie, CHEN Ruike. A Novel Latch-Up-Immune LVTSCR for 5 V Operating Voltage Circuit[J]. Microelectronics, 2022, 52(1): 120 Copy Citation Text show less
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    [2] KER M D, HSU K C. Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits [J]. IEEE Trans Dev & Mater Reliab, 2005, 5(2): 235-249.

    [3] KOO Y, LEE K, KIM K, et al. Design of SCR-based ESD protection device for power clamp using deep-submicron CMOS technology [J]. Microelec J, 2009, 40(6): 1007-1012.

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    [5] BLAHO M, POGANY D, GORNIK E, et al. Internal behavior of BCD ESD protection devices under TLP and very-fast TLP stress [J]. IEEE Trans Dev & Mater Reliab, 2004, 4(3): 535-541.

    [6] SONG B, HAN Y, LI M L, et al. Substrate-triggered GGNMOS in 65 nm CMOS process for ESD application [J]. Elec Lett, 2010, 46(7): 518-520.

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    [9] LIU Z W, LIOU J J, VINSON J. Novel silicon-controlled rectifier (SCR) for high-voltage electrostatic discharge (ESD) applications [J]. IEEE Elec Dev Lett, 2008, 29(7): 753-755.

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    [11] SEMENOV O, SARBISHAEI H, SACHDEV M. Analysis and design of LVTSCR-based EOS/ESD protection circuits for burn-in environment [C] // 6th Int Symp Qual Elec Des. San Jose, CA, USA. 2005: 427-432.

    [14] ZHU Z H, YANG Z N, ZHANG Y T, et al. TCAD simulation study of ESD behavior of InGaAs/InP heterojunction tunnel FETs [J]. Crystals, 2020, 10(11): 1059.

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    [18] LIANG H L, XU Q, ZHU L, et al. Design of a gate diode triggered SCR for dual-direction high-voltage ESD protection [J]. IEEE Elec Dev Lett, 2019, 40(2): 163-166.

    WANG Songyan, FAN Xiaomei, ZHU Zhihua, ZHANG Yingtao, WANG Yao, LIOU Junjie, CHEN Ruike. A Novel Latch-Up-Immune LVTSCR for 5 V Operating Voltage Circuit[J]. Microelectronics, 2022, 52(1): 120
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