Qian WANG, Jiangtao XU, Zhiyuan GAO, Quanmin CHEN. Effect of Transfer Gate Doping on Full Well Capacity and Dark Current in CMOS Active Pixels[J]. Acta Photonica Sinica, 2022, 51(11): 1104002
- Acta Photonica Sinica
- Vol. 51, Issue 11, 1104002 (2022)
Fig. 1. 4T-PPD pixel structure profile of P+ TG and N+ TG
Fig. 2. Potential diagram along the emission current path of P+ TG and N+ TG
Fig. 3. Two-dimensional simulation profiles
Fig. 4. One-dimensional potential diagrams under TG
Fig. 5. Simulation results of FWC and dark charges with two types of doped TG at 0 V
Fig. 6. Simulation results of FWC and dark current with two types of doped TG at various VTG_off
Fig. 7. Simulation results of CTE with P+TG and N+TG
Fig. 8. One-dimensional potential diagram under TG channels with TG on
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Table 1. The design parameters in this paper
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