• Photonics Research
  • Vol. 8, Issue 2, 127 (2020)
Henry C. Frankis1、*, Hamidu M. Mbonde1, Dawson B. Bonneville1, Chenglin Zhang1, Richard Mateman2, Arne Leinse2, and Jonathan D. B. Bradley1
Author Affiliations
  • 1Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada
  • 2LioniX International BV, Enschede AL 7500, The Netherlands
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    DOI: 10.1364/PRJ.8.000127 Cite this Article Set citation alerts
    Henry C. Frankis, Hamidu M. Mbonde, Dawson B. Bonneville, Chenglin Zhang, Richard Mateman, Arne Leinse, Jonathan D. B. Bradley. Erbium-doped TeO2-coated Si3N4 waveguide amplifiers with 5 dB net gain[J]. Photonics Research, 2020, 8(2): 127 Copy Citation Text show less
    (a) Diagram of the TeO2:Er3+-coated Si3N4 waveguide structure. (b) Calculated optical electric-field profile for the fundamental 1550 and 970 nm TE waveguide modes. (c) Resonance spectrum of a TeO2:Er3+-coated Si3N4 waveguide ring resonator with a 400 μm radius and 2.6 μm nominal gap at a wavelength of 1637 nm. The data is fit using coupled mode theory to extract an intrinsic Q factor of 1.3×106 corresponding to 0.25 dB/cm waveguide loss.
    Fig. 1. (a) Diagram of the TeO2:Er3+-coated Si3N4 waveguide structure. (b) Calculated optical electric-field profile for the fundamental 1550 and 970 nm TE waveguide modes. (c) Resonance spectrum of a TeO2:Er3+-coated Si3N4 waveguide ring resonator with a 400 μm radius and 2.6 μm nominal gap at a wavelength of 1637 nm. The data is fit using coupled mode theory to extract an intrinsic Q factor of 1.3×106 corresponding to 0.25 dB/cm waveguide loss.
    (a) Diagram of the double-side pumping setup used to measure gain on the TeO2:Er3+-coated Si3N4 chips. (b) Image of the chip showing the characteristic green light emission of erbium when pumping the paperclip waveguide.
    Fig. 2. (a) Diagram of the double-side pumping setup used to measure gain on the TeO2:Er3+-coated Si3N4 chips. (b) Image of the chip showing the characteristic green light emission of erbium when pumping the paperclip waveguide.
    (a) Erbium absorption loss from 1460 to 1640 nm measured in 2.2 and 6.7 cm long TeO2:Er3+-coated Si3N4 waveguides. Inset: Erbium absorption loss from 940 to 980 nm in a 2.2 cm long TeO2:Er3+-coated Si3N4 waveguide. (b) Measured back-collected photoluminescence intensity from the waveguide after the 1470 nm pump source has been turned off, fit to have an excited-state lifetime of 480 μs. Inset: Amplified spontaneous emission spectrum measured in a TeO2:Er3+-coated Si3N4 waveguide.
    Fig. 3. (a) Erbium absorption loss from 1460 to 1640 nm measured in 2.2 and 6.7 cm long TeO2:Er3+-coated Si3N4 waveguides. Inset: Erbium absorption loss from 940 to 980 nm in a 2.2 cm long TeO2:Er3+-coated Si3N4 waveguide. (b) Measured back-collected photoluminescence intensity from the waveguide after the 1470 nm pump source has been turned off, fit to have an excited-state lifetime of 480 μs. Inset: Amplified spontaneous emission spectrum measured in a TeO2:Er3+-coated Si3N4 waveguide.
    Gain measurements in a 2.2 cm long TeO2:Er3+-coated Si3N4 straight waveguide. (a) Internal net gain dependence on launched pump power for 970 and 1470 nm pump wavelengths and 1533 nm signal wavelength. (b) Internal net gain versus wavelength at maximum pump power for 970 and 1470 nm pump wavelengths.
    Fig. 4. Gain measurements in a 2.2 cm long TeO2:Er3+-coated Si3N4 straight waveguide. (a) Internal net gain dependence on launched pump power for 970 and 1470 nm pump wavelengths and 1533 nm signal wavelength. (b) Internal net gain versus wavelength at maximum pump power for 970 and 1470 nm pump wavelengths.
    Gain measurements in a 6.7 cm long TeO2:Er3+-coated Si3N4 paperclip waveguide. (a) Measured (dashed lines/circles) and simulated (solid lines) internal net gain versus launched pump power for 970 and 1470 nm pump wavelengths and 1558 nm signal wavelength. (b) Internal net gain versus wavelength at maximum pump power for 970 and 1470 nm pump wavelengths.
    Fig. 5. Gain measurements in a 6.7 cm long TeO2:Er3+-coated Si3N4 paperclip waveguide. (a) Measured (dashed lines/circles) and simulated (solid lines) internal net gain versus launched pump power for 970 and 1470 nm pump wavelengths and 1558 nm signal wavelength. (b) Internal net gain versus wavelength at maximum pump power for 970 and 1470 nm pump wavelengths.
    (a) Three-level rate equation model diagram, showing processes of stimulated transitions (S), spontaneous decay (t), and energy transfer upconversion (W). (b) Measured net gain in 6.7 cm long waveguide, compared to simulated gain with 0%, 22.5%, and 40% quenched ions.
    Fig. 6. (a) Three-level rate equation model diagram, showing processes of stimulated transitions (S), spontaneous decay (t), and energy transfer upconversion (W). (b) Measured net gain in 6.7 cm long waveguide, compared to simulated gain with 0%, 22.5%, and 40% quenched ions.
    Simulated net gain for TeO2:Er3+-coated Si3N4 waveguides of 5, 10, and 15 cm length versus (a) launched 1470 nm pump power at a 1558 nm signal wavelength and (b) signal wavelength for 150 mW of launched 1470 nm pump power.
    Fig. 7. Simulated net gain for TeO2:Er3+-coated Si3N4 waveguides of 5, 10, and 15 cm length versus (a) launched 1470 nm pump power at a 1558 nm signal wavelength and (b) signal wavelength for 150 mW of launched 1470 nm pump power.
    ParameterValue
    Er3+ ion concentration2.2×1020  ions/cm3
    970 nm background propagation loss2.5 dB/cm
    1470 nm background propagation loss0.25 dB/cm
    1558 nm background propagation loss0.25 dB/cm
    Launched signal power−20 dBm
    Upconversion parameter2.7×1018  cm3/s
    I13/24 lifetime0.48 ms
    I11/24 lifetime0.04 ms
    970 nm absorption/emission cross section2.8/2.8×1020  cm2
    1470 nm absorption/emission cross section3.0/0.4×1020  cm2
    1558 nm absorption/emission cross section3.5/4.4×1020  cm2
    Table 1. Parameters Used for the TeO2:Er3+ Rate Equation Model
    Henry C. Frankis, Hamidu M. Mbonde, Dawson B. Bonneville, Chenglin Zhang, Richard Mateman, Arne Leinse, Jonathan D. B. Bradley. Erbium-doped TeO2-coated Si3N4 waveguide amplifiers with 5 dB net gain[J]. Photonics Research, 2020, 8(2): 127
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