• Chinese Journal of Quantum Electronics
  • Vol. 22, Issue 4, 525 (2005)
[in Chinese]*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. LD pumped Yb:YAG laser[J]. Chinese Journal of Quantum Electronics, 2005, 22(4): 525 Copy Citation Text show less
    References

    [1] Sumida D S, Fan T Y. Effect of radiation trapping on fluorescence lifetime and emission cross section measurements in solid-state laser media [J]. Opt. Lett., 1994, 19(17): 1343-1346.

    [2] Lacovara P, Chai H K, Wangetal C A. Room-temperature diode pumped Yb: YAG laser [J]. Opt. Lett., 1991,16(14): 1089-1091.

    [3] Deloach L D, Payne S A, Chaseetal L L. Evaluation of absorption and emission properties of Yb3+ doped crystals for laser applications [J]. IEEE J. Quant. Electron., 1993, QE-29(4): 1179-1190.

    [4] Marshall C D, Smith L K, Beachetal R J. Diode-pumped Yb:Sr5(PO4)3F laser performance [J]. IEEE J. Quant.Electron., 1996, QE-32(4): 650-656.

    [5] Klbas R M, Anderson N G, Laidigetal W D. Strained-layer InGaAs-GaAs-AlGaAs photo pumped and current injection laser [J]. IEEE J. Quant. Electron., 1988, QE-24(8): 1605-1613.

    [6] Lim Chan Hwan, Yasukazu. Modeling of end-pumped CW quasi-three-level lasers [J], IEEE J. Quant Electron.,2002, QE-38(3): 306-311.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. LD pumped Yb:YAG laser[J]. Chinese Journal of Quantum Electronics, 2005, 22(4): 525
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