Contents
2005
Volume: 22 Issue 4
36 Article(s)

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Research Article
Study on raw material preparation method, crystal growth and structure of the scandium-containing garnet Nd:GSGG
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Chinese Journal of Quantum Electronics
  • Publication Date: Aug. 01, 2005
  • Vol. 22, Issue 4, 559 (2005)
Study on raw material preparation and structure of LD-pumped Nd:GGG laser crystal
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
GGG polycrystalline material was prepared by co-precipitation method with the metal Ga and Gd2O3 as the starting materials and aqueous ammonia as the preprecipitator. The X-ray diffraction spectra of GGG polycrystalline material prepared by co-precipitation method ,Nd:GGG prepared by solid-state method and the crystals
Chinese Journal of Quantum Electronics
  • Publication Date: Aug. 01, 2005
  • Vol. 22, Issue 4, 565 (2005)
Thermal stability, Judd-Ofelt theory analysis and spectroscopic properties of a new Er3+/Yb3+-codoped germanotellurite glass
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Chinese Journal of Quantum Electronics
  • Publication Date: Aug. 01, 2005
  • Vol. 22, Issue 4, 597 (2005)
Subjective measurement principle and implementation of ocular wave-front aberrations
[in Chinese], [in Chinese], and [in Chinese]
Chinese Journal of Quantum Electronics
  • Publication Date: Aug. 01, 2005
  • Vol. 22, Issue 4, 626 (2005)
The nanocrystalline silicon clusters form ed in thermally annealed a-Si:H films and the potolum inescence
[in Chinese], [in Chinese], and [in Chinese]
Nanocrystalline silicon(nc-Si) clusters can be formed by rapid thermal annealing the hydrogenated amorphous silicon (a-Si:H)films at 600℃-620℃ for about 10 s. Characterized by micro-Raman scattering, the formed nc-Si clusters are randomly distributed in the amorphous matrix of the annealed films with their sizes in the
Chinese Journal of Quantum Electronics
  • Publication Date: Aug. 01, 2005
  • Vol. 22, Issue 4, 646 (2005)
The PSF correction method for adjacency effect in satellite images
[in Chinese], [in Chinese], and [in Chinese]
Chinese Journal of Quantum Electronics
  • Publication Date: Aug. 01, 2005
  • Vol. 22, Issue 4, 657 (2005)