Wei-Qin Li, Zhi-Sheng Huo, Hong-Bin Pu. Transient characteristics of electron beam induced current in dielectric and semiconductor sample [J]. Acta Physica Sinica, 2020, 69(6): 060201-1
- Acta Physica Sinica
- Vol. 69, Issue 6, 060201-1 (2020)
Fig. 1. Schematic of currents generated by the interaction of e-beams with samples.
Fig. 2. Schematic diagram of the experimental device.
Fig. 3. Simulated (lines) and experimental (squares) results of total electron yield.
Fig. 4. Simulated free charge densities N (t ) along the incident direction.
Fig. 5. Simulated net space densities (P (t ) – N (t )) along the incident direction.
Fig. 6. Simulated (a) space potentials V (t ) and (b) space fields F (t ) along the incident direction.
Fig. 7. Simulated (line) and experimental (squares) effective emission currents I I.
Fig. 8. (a) Simulated I EBIC and I TE; (b) simulated (line) and experimental (squares) I S.
Fig. 9. Simulated I EBIC in the steady state under the different values of beam current I B.
Fig. 10. Simulated I TE as a function of the irradiation time in the different beam energies E B.
Fig. 11. Simulated I EBIC as a function of the irradiation time in the different beam energies E B.
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Table 1.
Default values of parameters in the scattering process.
电子散射过程参数默认设置
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Table 2. Default values of parameters.
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Table 3. Default values of parameters.
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