Growth optimization of GaAs-based InAs/AlSb 2DEG structure

CUI Xiao-Ran; LYU Hong-Liang; LI Jin-Lun; SU Xiang-Bin; XU Ying-Qiang; NIU Zhi-Chuan

doi:10.11972/j.issn.1001-9014.2018.04.001

Journals >Journal of Infrared and Millimeter Waves >Volume 37 >Issue 4 >Page 385 > Article

Journal of Infrared and Millimeter Waves
Vol. 37, Issue 4, 385 (2018)

Growth optimization of GaAs-based InAs/AlSb 2DEG structure

CUI Xiao-Ran^1、2, LYU Hong-Liang¹, LI Jin-Lun^2、3, SU Xiang-Bin^2、4, XU Ying-Qiang^2、5, and NIU Zhi-Chuan^2、5

Author Affiliations

¹[in Chinese]

²[in Chinese]

³[in Chinese]

⁴[in Chinese]

⁵[in Chinese]

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DOI: 10.11972/j.issn.1001-9014.2018.04.001 Cite this Article

CUI Xiao-Ran, LYU Hong-Liang, LI Jin-Lun, SU Xiang-Bin, XU Ying-Qiang, NIU Zhi-Chuan. Growth optimization of GaAs-based InAs/AlSb 2DEG structure[J]. Journal of Infrared and Millimeter Waves, 2018, 37(4): 385 Copy Citation Text

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Abstract

InAs/AlSb two-dimensional electron gas (2DEG) structures were successfully grown by MBE equipment. 2DEG characteristics of samples were improved by optimizing the the thickness of AlGaSb buffer layer, the thickness of InAs/AlSb interface layer, and the thickness of AlSb spacer. The InAs/AlSb 2DEG structure sample with an electron mobility of 20500 cm2/V·s and a sheet electron density of 2.0×1012/cm2 were achieved when the thickness of AlSb spacer is fixed at 5 nm. It provides a reference for the research and fabrication of InAs/AlSb HEMT.

Keywords

mobility 2DEG high electron mobility transistor (HEMT)molecular beam epitaxy (MBE)

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