Yang Shi, De Zhou, Yu Yu, Xinliang Zhang. 80 GHz germanium waveguide photodiode enabled by parasitic parameter engineering[J]. Photonics Research, 2021, 9(4): 605
- Photonics Research
- Vol. 9, Issue 4, 605 (2021)
Fig. 1. Cross-section view and equivalent circuit for a conventional PD.
Fig. 2. (a) Simulated bandwidth varying with R s L p R s
Fig. 3. (a) 3D schematic of the PD-A. (b) Cross-section of the PD-A with full silicon P + +
Fig. 4. I-V characteristics of PDs at dark and with light incidence.
Fig. 5. Measured and fitted bandwidth characteristics of Ge PDs.
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Table 1. Silicon Doping and Electrode Inductors of Three Kinds of PDs
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Table 2. Responsivities and Dark Currents of Three Kinds of PDs
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Table 3. Comparison of the High-Speed Waveguide-Coupled Ge PDs
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