With Moore's law approaching the limit, Carbon Nanotube Field Effect Transistor (CNTFET) is considered to be a powerful substitute for CMOS transistors below 5 nm. The CNTFET has a quasi one-dimensional structure, and the gate can effectively control the on/off of the conductive channel. At the same time, the carrier can realize ballistic transport in the channel, and has a very high mobility. Therefore, CNTFET can provide large current transmission capacity in low voltage environment, which provides a solution for the implementation of nano scale ultra large-scale analog/logic circuits. This paper summarizes the development status of CNTFET compact model, analyzes the problems faced at this stage, such as accurate drain current model, tunneling effect, parasitic effect and multi-nanotube model, and focuses on the solutions to the above problems. At the end, the future application prospect of the compact model is discussed.