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Journals >Chinese Journal of Quantum Electronics >Volume 21 >Issue 4 >Page 542 > Article

Chinese Journal of Quantum Electronics
Vol. 21, Issue 4, 542 (2004)

Tests and analyses of multilayer structure HB-LED epitaxial slice by electrochemical C-V measurement

[in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese]. Tests and analyses of multilayer structure HB-LED epitaxial slice by electrochemical C-V measurement[J]. Chinese Journal of Quantum Electronics, 2004, 21(4): 542 Copy Citation Text

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Abstract

Electric parameters of double heterojunction multilayer structure epitaxy slice (depth, dope concentration, electric type etc.) were tested and analysed by ECV. Epitaxial slice parameters were measured.

Keywords

ECV electrolyte differential capacitance ECV optoelectronics Schottky junction

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[in Chinese], [in Chinese], [in Chinese]. Tests and analyses of multilayer structure HB-LED epitaxial slice by electrochemical C-V measurement[J]. Chinese Journal of Quantum Electronics, 2004, 21(4): 542

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