• Acta Optica Sinica
  • Vol. 37, Issue 2, 231001 (2017)
Liu Huasong1、2、*, Wang Lishuan1、2, Yang Xiao1, Liu Dandan1, Jiang Chenghui1, Jiang Yugang1, Ji Yiqin1、2, Zhang Feng1, and Chen Deying2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/aos201737.0231001 Cite this Article Set citation alerts
    Liu Huasong, Wang Lishuan, Yang Xiao, Liu Dandan, Jiang Chenghui, Jiang Yugang, Ji Yiqin, Zhang Feng, Chen Deying. Energy Band Properties of Hafnium Oxide Thin Films Fabricated by Ion Beam Sputtering Technique[J]. Acta Optica Sinica, 2017, 37(2): 231001 Copy Citation Text show less
    References

    [1] Thielsch R, Gatto A, Heber J, et al. A comparative study of the UV optical and structural properties of SiO2, Al2O3, and HfO2 single layers deposited by reactive evaporation, ion-assisted deposition and plasma ion-assisted deposition[J]. Thin Solid Films, 2002, 410(1-2): 86-93.

    [2] Kim J, Kim S, Kang H, et al. Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods[J]. Journal of Applied Physics, 2005, 98(9): 094504.

    [3] Tan R Q, Azuma Y, Fujimoto T, et al. Preparation of ultrathin HfO2 films and comparison of HfO2/SiO2/Si interfacial structures[J]. Surface and Interface Analysis, 2004, 36(8): 1007-1010.

    [4] Tan R Q, Azuma Y, Kojima I. Comparative study of the interfacial characteristics of sputter-deposited HfO2 on native SiO2/Si (100) using in situ XPS, AES and GIXR[J]. Surface and Interface Analysis, 2006, 38(4): 784-788.

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    [6] Franta D, Ohlídal I, Necˇas D, et al. Optical characterization of HfO2 thin films[J]. Thin Solid Films, 2011, 519(18): 6085-6091.

    [7] Aygun G, Cantas A, Simsek Y, et al. Effects of physical growth conditions on the structural and optical properties of sputtered grown thin HfO2 films[J]. Thin Solid Films, 2011, 519(17): 5820-5825.

    [8] Zhang Wenjie, Peng Yufeng, Wang Jiancheng, et al. HfO2 optical films prepared by dual ion beam sputtering deposition[J]. High Power Laser and Particle Beams, 2007, 19(9): 1543-1546.

    [9] Liu H S, Jiang Y G, Wang L S, et al. Correlation between properties of HfO2 films and preparing parameters by ion beam sputtering deposition[J]. Applied Optics, 2014, 53(4): A405-A411.

    [10] Ferlauto A S, Ferreira G M, Pearce J M, et al. Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics[J]. Journal of Applied Physics, 2002, 92(5): 2424-2436.

    [11] Liu Huasong, Ji Yiqin, Zhang Feng, et al. Dispersive properties of optical constants of some metallic oxide thin films in the mid-infrared regions[J]. Acta Optica Sinica, 2014, 34(8): 0831003.

    [12] Handbook of mathematics[M]. Beijing: Higher Education Press, 1979: 853-858.

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    Liu Huasong, Wang Lishuan, Yang Xiao, Liu Dandan, Jiang Chenghui, Jiang Yugang, Ji Yiqin, Zhang Feng, Chen Deying. Energy Band Properties of Hafnium Oxide Thin Films Fabricated by Ion Beam Sputtering Technique[J]. Acta Optica Sinica, 2017, 37(2): 231001
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