• Infrared and Laser Engineering
  • Vol. 51, Issue 3, 20220087 (2022)
Xi Wang1, Yingjie Liu1, Zimeng Zhang1, Jianing Wang1, Yong Yao1, Qinghai Song2, and Ke Xu1、*
Author Affiliations
  • 1Department of Electronic & Information Engineering, Harbin Institute of Technology, Shenzhen 518055, China
  • 2Department of Science, Harbin Institute of Technology, Shenzhen 518055, China
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    DOI: 10.3788/IRLA20220087 Cite this Article
    Xi Wang, Yingjie Liu, Zimeng Zhang, Jianing Wang, Yong Yao, Qinghai Song, Ke Xu. Research progress in 2 μm waveband on-chip photonic integrated devices (Invited)[J]. Infrared and Laser Engineering, 2022, 51(3): 20220087 Copy Citation Text show less
    Research progress of on-chip modulators in 2 μm waveband[19-23,25]
    Fig. 1. Research progress of on-chip modulators in 2 μm waveband[19-23,25]
    Research progress of on-chip detectors with different material systems at 2 μm waveband[27-37]
    Fig. 2. Research progress of on-chip detectors with different material systems at 2 μm waveband[27-37]
    (a) SEM image of cascaded MMI and SEM image of a single MMI[38]; (b) Test image of cascaded MMI[38]; (c) Schematic diagram of a power beam splitter based on subwavelength grating structure[46]; (d) Experimental result of the beam splitter based on the subwavelength grating, the inset is the SEM image of the device[46]
    Fig. 3. (a) SEM image of cascaded MMI and SEM image of a single MMI[38]; (b) Test image of cascaded MMI[38]; (c) Schematic diagram of a power beam splitter based on subwavelength grating structure[46]; (d) Experimental result of the beam splitter based on the subwavelength grating, the inset is the SEM image of the device[46]
    (a) and (b) are AWG electron microscope images and experimental results images based on SOI with a top silicon thickness of 500 nm, respectively[48]; (c) and (d) are AWG electron microscope images and experimental results images based on SOI with a top silicon thickness of 220 nm, respectively[50]
    Fig. 4. (a) and (b) are AWG electron microscope images and experimental results images based on SOI with a top silicon thickness of 500 nm, respectively[48]; (c) and (d) are AWG electron microscope images and experimental results images based on SOI with a top silicon thickness of 220 nm, respectively[50]
    (a)-(d) correspond to the transmission spectra of the four output ports of the mode division multiplexer TE0, TE1, TE2, and TE3, respectively[53]
    Fig. 5. (a)-(d) correspond to the transmission spectra of the four output ports of the mode division multiplexer TE0, TE1, TE2, and TE3, respectively[53]
    (a) Electron microscope and SEM of multimode waveguide grating filter[55]; (b) Transmission spectrum under different grating periods[55]
    Fig. 6. (a) Electron microscope and SEM of multimode waveguide grating filter[55]; (b) Transmission spectrum under different grating periods[55]
    Ref.DeviceActive material Operating wavelength /μm Output power/Gain
    [9] LaserInAs/InGaAs2.411 mW
    [10] LaserInGaAs/GaAsSb2.321.3 mW
    [16] LaserInGaAs/GaAsSb2.2-2.4NA
    [11] LaserTeO2:Tm3+1.815-1.8954.5 mW
    [12] LaserAl2O3:Ho3+2.02-2.115 mW
    [13] Raman laserDiamond1.95-2.05>0.25 mW
    [14] AmplifierInP/GaInPAs213 dB
    [15] AmplifierTeO2:Tm3+1.86-27.6 dB
    Table 1. Reported performance of on-chip lasers and optical amplifiers at 2 μm band
    Ref.Material platformWavelength/nmCoupling efficiency/dB
    [39] SOI1 952−8.4
    [38] SOI2 020−7.9
    [45] SOI1 952−6.2
    [41] As2S31 950−4.3
    Table 2. Performance comparison of reported 2 μm band grating couplers
    Ref.StructureWavelength/nmPπ /mW Rise/Fall time τ/µs Insertion loss/dBExtinction ratio/dB
    [56] MZI232.315/152-330
    [57] MZI1 98584.36/40.227
    [58] MZI1 9102333.08/37.841.125
    [59] MZI2 02325.213.49/3.461.1317
    [59] MRR2 0243.333.65/3.70N/AN/A
    Table 3. Reported performance of optical switches at 2 μm waveband
    MaterialΔnOperating wavelength/μmLasers/amplifiersModulatorPhotodetectorPassive devices
    SOI2.01-2.451.55×
    2××
    Si3N40.55-0.981.55×××
    2×××
    As2S30.98-1.421.55×××
    2×××
    LiNbO30.76-1.21.55××
    2××
    III-V1.7-2.131.55×
    2×
    Table 4. Application comparison of on-chip devices based on various material systems
    Xi Wang, Yingjie Liu, Zimeng Zhang, Jianing Wang, Yong Yao, Qinghai Song, Ke Xu. Research progress in 2 μm waveband on-chip photonic integrated devices (Invited)[J]. Infrared and Laser Engineering, 2022, 51(3): 20220087
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