[1] A W Blakers, A Wang, A M Milne et al. 22.8% efficient silicon solar cell. Appl Phys Lett, 55, 1363(1989).

[2] S Joonwichien, S Utsunomiya, Y Kida et al. Improved rear local contact formation using Al paste containing Si for industrial PERC solar cell. IEEE J Photovolt, 8, 54(2018).

[3] A M Albadri. Characterization of Al₂O₃ surface passivation of silicon solar cells. TSF, 562, 451(2014).

[4] M Pawlik, J P Vilcot, M Halbwax et al. Electrical and chemical studies on Al₂O₃ passivation activation process. Energy Procedia, 60, 85(2014).

[5]

[6] D Inns. Understanding metal induced recombination losses in silicon solar cells with screen printed silver contacts. Energy Procedia, 98, 23(2016).

[7] N Chen, A Ebong. Towards 20% efficient industrial Al-BSF silicon solar cell with multiple busbars and fine gridlines. Sol Energy Mater Sol Cells, 146, 107(2016).

[8]

[9] B Hallam, A Herguth, P Hamer et al. Eliminating light-induced degradation in commercial p-type Czochralski silicon solar cells. Appl Sci, 8, 10(2018).

[10] A Herguth, G Hahn. Kinetics of the boron-oxygen related defect in theory and experiment. J Appl Phys, 108, 114509(2010).

[11]

[12]

[13] M Müller, G Fischer, B Bitnar et al. Loss analysis of 22% efficient industrial PERC solar cells. Energy Procedia, 124, 131(2017).

[14]

[15] A Fell. A free and fast three-dimensional/two-dimensional solar cell simulator featuring conductive boundary and quasi-neutrality approximations. IEEE Trans Electron Devices, 60, 733(2013).

[16] J A Del Alamo, R M Swanson. The physics and modeling of heavily doped emitters. IEEE Trans Electron Devices, 31, 1878(1984).

[17] R M J S C Swanson. Point-contact solar cells: modeling and experiment. Sol Cells, 17, 85(1986).

[18] R Brendel. Modeling solar cells with the dopant-diffused layers treated as conductive boundaries. Prog Photovolt: Res Appl, 20, 31(2012).

[19]

[20] A Fell, K R Mcintosh, P P Altermatt et al. Input parameters for the simulation of silicon solar cells in 2014. IEEE J Photovolt, 5, 1250(2017).

[21] B Min, M Müller, H Wagner et al. A roadmap toward 24% efficient PERC solar cells in industrial mass production. IEEE J Photovolt, 7, 1541(2017).

[22] M Ernst, D Walter, A Fell et al. Efficiency potential of p-type Al passivated perc solar cells with locally laser-doped rear contacts. IEEE J Photovolt, 6, 1(2016).

[23] W Shockley. The theory of p−n junctions in semiconductors and p−n junction transistors. Bell Syst Tech J, 28, 435(1949).

[24] P Würfel. Physics of solar cells: from principles to new concepts. Berlin: Wiley-vch(2005).

[25] H Huang, C Modanese, S Sun et al. Effective passivation of p⁺ and n⁺ emitters using SiO₂/Al₂O₃/SiN_x stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells. Sol Energy Mater Sol Cells, 186, 356(2018).

[26] A Kimmerle, M M Rahman, S Werner et al. Precise parameterization of the recombination velocity at passivated phosphorus doped surfaces. J Appl Phys, 119, 025706(2016).

[27] G Dingemans, W Kessels. Status and prospects of Al₂O₃-based surface passivation schemes for silicon solar cells. J Vac Sci Technol A, 30, 040802(2012).

[28] S W Glunz, F Feldmann. SiO₂ surface passivation layers–a key technology for silicon solar cells. Sol Energy Mater Sol Cells, 185, 260(2018).

[29] Z Zhuo, Y Sannomiya, Y Kanetani et al. Interface properties of SiO_xN_y layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation. Nanoscale Res Lett, 8, 201(2013).

[30] A Richter, S W Glunz, F Werner et al. Improved quantitative description of Auger recombination in crystalline silicon. Phys Rev B, 86, 4172(2012).

[31] W Shockley, W Jr Read. Statistics of the recombinations of holes and electrons. Phys Rev, 87, 835(1952).

[32] R Hall. Germanium rectifier characteristics. Phys Rev, 83, 228(1951).

[33] A Richter, F Werner, A Cuevas et al. Improved parameterization of Auger recombination in silicon. Energy Procedia, 27, 88(2012).

[34] D C Walter, B Lim, J Schmidt. Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron–oxygen-related defect center. Prog Photovolt: Res Appl, 24, 920(2016).

[35] J Schmidt, B Lim, D Walter et al. Impurity-related limitations of next-generation industrial silicon solar cells. IEEE J Photovolt, 3, 114(2013).

[36] F Wolny, T Weber, M Müller et al. Light induced degradation and regeneration of high efficiency Cz PERC cells with varying base resistivity. Energy Procedia, 38, 523(2013).

[37] R Woehl, M Hörteis, S Glunz. Analysis of the optical properties of screen-printed and aerosol-printed and plated fingers of silicon solar cells. Adv OptoElectron, 759340(2008).

[38] A Blakers. Shading losses of solar-cell metal grids. J Appl Phys, 71, 5237(1992).

[39] S Braun, G Micard, G Hahn. Solar cell improvement by using a multi busbar design as front electrode. Energy Procedia, 27, 227(2012).

[40] J Walter, M Tranitz, M Volk et al. Multi-wire interconnection of busbar-free solar cells. Energy Procedia, 55, 380(2014).

[41] A U Rehman, S H Lee. Review of the potential of the Ni/Cu plating technique for crystalline silicon solar cells. Materials, 7, 1318(2014).

[42] W Shockley, H J Queisser. Detailed balance limit of efficiency of p–n junction solar cells. J Appl Phys, 32, 510(1961).

[43] M J Kerr, A Cuevas, P Campbell. Limiting efficiency of crystalline silicon solar cells due to Coulomb-enhanced Auger recombination. Prog Photovolt: Res Appl Math, 11, 97(2003).

[44] A Richter, M Hermle, S W Glunz. Reassessment of the limiting efficiency for crystalline silicon solar cells. IEEE J Photovolt, 3, 1184(2013).