1Centro de Investigaciones en Optica A.C., Loma del Bosque 115, Lomas del Campestre, Leon, Guanajuato 37150, Mexico
2Departamento de Matematicas y Fisica, Centro de Ciencias Basicas, Universidad Autonoma de Aguascalientes, Av. Universidad #940, Ciudad Universitaria, C.P. 20131, Aguascalientes, AGS, Mexico
E. Castro-Camus, M. Alfaro. Photoconductive devices for terahertz pulsed spectroscopy: a review [Invited][J]. Photonics Research, 2016, 4(3): 0A36
Copy Citation Text
Fig. 3. Resistance and lifetime measurements for a bow-tie antenna with a 5 μm photoconductive gap. Regions (I) and (II) are marked according to the two-stage increase in the resistivity at intermediate anneal temperatures and correspond to expected optimum requirements for THz receivers and emitters, respectively. Reproduced with permission from [28], copyright 2003, American Institute of Physics.
Fig. 4. Schematic of a single nanowire photoconductive detector geometry and optical arrangement used in its characterization. The upper inset shows a THz transient measured with this device. The lower inset shows a SEM image of the device. Reproduced with permission from [56], copyright 2014, American Chemical Society.
Fig. 5. (a) Normalized luminescence distribution without bias field minus normalized luminescence distributions with bias field from a photoconductive emitter. Dark tones mark a strong field-induced reduction of the luminescence, white: enhancement of the normalized luminescence. Reproduced with permission from [62], copyright 2000, American Institute of Physics. (b) Charge distribution from a Monte Carlo simulation similar to the one presented in [65].