Size Effect on the Interface Modulation of Interlayer and Auger Recombination Rates in MoS2/WSe2 van der Waals Heterostructures

Shilin TAN; Shunda YIN; Gang OUYANG

doi:10.15541/jim20190386

Journals >Journal of Inorganic Materials >Volume 35 >Issue 6 >Page 682 > Article

Journal of Inorganic Materials
Vol. 35, Issue 6, 682 (2020)

Size Effect on the Interface Modulation of Interlayer and Auger Recombination Rates in MoS₂/WSe₂ van der Waals Heterostructures

Shilin TAN, Shunda YIN, and Gang OUYANG^*

Author Affiliations

Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Hunan Normal University, Changsha 410081, China

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DOI: 10.15541/jim20190386 Cite this Article

Shilin TAN, Shunda YIN, Gang OUYANG. Size Effect on the Interface Modulation of Interlayer and Auger Recombination Rates in MoS₂/WSe₂ van der Waals Heterostructures[J]. Journal of Inorganic Materials, 2020, 35(6): 682 Copy Citation Text

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1. Schematic diagrams of two kinds of van der Waals heterostructures

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Thickness-dependent bandgaps of MoS2, WSe2 and h-BN

2. Thickness-dependent bandgaps of MoS₂, WSe₂ and h-BN

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$Thickness-dependent AR lifetime of negative trion (${{\tau }_{{{\text{A}}^{-}}}}$) and biexciton (${{\tau }_{{{\text{A}}^{xx}}}}$) of different system$

3. Thickness-dependent AR lifetime of negative trion (${{\tau }_{{{\text{A}}^{-}}}}$) and biexciton (${{\tau }_{{{\text{A}}^{xx}}}}$) of different system

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$Thickness-dependent interlayer recombination (R) and biexciton AR rate ($\tau _{{{\text{A}}^{xx}}}^{-1}$) of heterostructures$

4. Thickness-dependent interlayer recombination (R) and biexciton AR rate ($\tau _{{{\text{A}}^{xx}}}^{-1}$) of heterostructures

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