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Journal of Semiconductors
Vol. 44, Issue 12, 124101 (2023)

Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM

Zhenzhen Kong^1、4, Hongxiao Lin^3、4, Hailing Wang², Yanpeng Song², Junjie Li¹, Xiaomeng Liu², Anyan Du¹, Yuanhao Miao^1、3, Yiwen Zhang^1、4, Yuhui Ren^1、4, Chen Li^1、4, Jiahan Yu^1、4, Jinbiao Liu^1、4, Jingxiong Liu^1、4, Qinzhu Zhang¹, Jianfeng Gao¹, Huihui Li², Xiangsheng Wang², Junfeng Li¹, Henry H. Radamson³, Chao Zhao², Tianchun Ye^1、4, and Guilei Wang^2、5、*

Author Affiliations

¹Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

²Beijing Superstring Academy of Memory Technology, Beijing 100176, China

³Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China

⁴Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, China

⁵Hefei National Laboratory, Hefei 230088, China

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DOI: 10.1088/1674-4926/44/12/124101 Cite this Article

Zhenzhen Kong, Hongxiao Lin, Hailing Wang, Yanpeng Song, Junjie Li, Xiaomeng Liu, Anyan Du, Yuanhao Miao, Yiwen Zhang, Yuhui Ren, Chen Li, Jiahan Yu, Jinbiao Liu, Jingxiong Liu, Qinzhu Zhang, Jianfeng Gao, Huihui Li, Xiangsheng Wang, Junfeng Li, Henry H. Radamson, Chao Zhao, Tianchun Ye, Guilei Wang. Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM[J]. Journal of Semiconductors, 2023, 44(12): 124101 Copy Citation Text

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References

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Zhenzhen Kong, Hongxiao Lin, Hailing Wang, Yanpeng Song, Junjie Li, Xiaomeng Liu, Anyan Du, Yuanhao Miao, Yiwen Zhang, Yuhui Ren, Chen Li, Jiahan Yu, Jinbiao Liu, Jingxiong Liu, Qinzhu Zhang, Jianfeng Gao, Huihui Li, Xiangsheng Wang, Junfeng Li, Henry H. Radamson, Chao Zhao, Tianchun Ye, Guilei Wang. Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM[J]. Journal of Semiconductors, 2023, 44(12): 124101

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