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    Journals >Photonics Research >Volume 7 >Issue 2 >Page 144 > Article
    • Photonics Research
    • Vol. 7, Issue 2, 144 (2019)
    Efficient InGaN-based yellow-light-emitting diodes
    Fengyi Jiang1、*, Jianli Zhang1、2, Longquan Xu1、2, Jie Ding1、2, Guangxu Wang1、2, Xiaoming Wu1、2, Xiaolan Wang1、2, Chunlan Mo1、2, Zhijue Quan1、2, Xing Guo1、2, Changda Zheng1、2, Shuan Pan1、2, and Junlin Liu1、2、3
    Author Affiliations
  • 1National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China
  • 2Nanchang Yellow Green Lighting Company Limited, Nanchang 330096, China
  • 3e-mail: liujunlin@ncu.edu.cn
    • show less
    DOI: 10.1364/PRJ.7.000144 Cite this Article Set citation alerts
    Fengyi Jiang, Jianli Zhang, Longquan Xu, Jie Ding, Guangxu Wang, Xiaoming Wu, Xiaolan Wang, Chunlan Mo, Zhijue Quan, Xing Guo, Changda Zheng, Shuan Pan, Junlin Liu. Efficient InGaN-based yellow-light-emitting diodes[J]. Photonics Research, 2019, 7(2): 144 Copy Citation Text show less
    References

    [1] N. Holonyak, S. F. Bevacqua. Coherent (visible) light emission from Ga(As1-xPx) junctions. Appl. Phys. Lett., 1, 82-83(1962).

    [2] Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, T. Mukai. White light emitting diodes with super-high luminous efficacy. J. Phys. D, 43, 354002(2010).

    [3] M. R. Krames, H. M. Ochiai, G. E. Hofler, C. C. Carter. High-power truncated inverted pyramid (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency. Appl. Phys. Lett., 75, 2365-2367(1999).

    [4] B. Damilano, B. Gil. Yellow-red emission from (Ga,In)N heterostructures. J. Phys. D, 48, 403001(2015).

    [5] W. O. Groves, A. H. Herzog, M. G. Craford. The effect of nitrogen doping on GaAs1-xPx electroluminescent diodes. Appl. Phys. Lett., 19, 184-186(1971).

    [6] C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, V. M. Robbins. High performance AlGaInP visible light-emitting diodes. Appl. Phys. Lett., 57, 2937-2939(1990).

    [7] F. A. Kish, F. M. Steranka, D. C. DeFevere, D. A. Vanderwater, K. G. Park, C. P. Kuo, T. D. Osentowski, M. J. Peanasky, J. G. Yu, R. M. Fletcher, D. A. Steigerwald, M. G. Craford. Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes. Appl. Phys. Lett., 64, 2839-2841(1994).

    [8] H. Satoa, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujitob, J. S. Speck, S. P. DenBaars, S. Nakamura. Optical properties of yellow light-emitting diodes grown on semipolar (11-22) bulk GaN substrates. Appl. Phys. Lett., 92, 221110(2008).

    [9] S. Saito, R. Hashimoto, J. Hwang, S. Nunoue. InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range. Appl. Phys. Express, 6, 111004(2013).

    [10] J. Zhang, C. Xiong, J. Liu, Z. Quan, L. Wang, F. Jiang. High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate. Appl. Phys. A, 114, 1049-1053(2014).

    [11] F. Jiang, Y. Pu. Double inlet showerhead for metal organic vapor deposition reactor. CN patent(2006).

    [12] J. Liu, J. Zhang, Q. Mao, X. Wu, F. Jiang. Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate. CrystEngComm, 15, 3372-3376(2013).

    [13] A. Hangleiter, F. Hitzel, C. Netzel, D. Fuhrmann, U. Rossow, G. Ade, P. Hinze. Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency. Phys. Rev. Lett., 95, 127402(2005).

    [14] X. Wu, J. Liu, Z. Quan, C. Xiong, C. Zheng, J. Zhang, Q. Mao, F. Jiang. Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes. Appl. Phys. Lett., 104, 221101(2014).

    [15] Z. Quan, L. Wang, C. Zheng, J. Liu, F. Jiang. Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes. J. Appl. Phys., 116, 183107(2014).

    [16] X. Wu, J. Liu, F. Jiang. Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes. J. Appl. Phys., 118, 164504(2015).

    [17] Z. Quan, J. Liu, F. Fang, G. Wang, F. Jiang. A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices. J. Appl. Phys., 118, 193102(2015).

    [18] C. Li, C. Wu, C. Hsu, L. Lu, H. Li, T. Lu, Y. Wu. 3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits. AIP Adv., 6, 055208(2016).

    [19] J. Liu, J. Zhang, G. Wang, C. Mo, L. Quan, J. Din, Z. Quan, X. Wang, S. Pan, C. Zheng, X. Wu, W. Fang, F. Jiang. Status of GaN-based green light-emitting diodes. Chin. Phys. B, 24, 067804(2015).

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    Fengyi Jiang, Jianli Zhang, Longquan Xu, Jie Ding, Guangxu Wang, Xiaoming Wu, Xiaolan Wang, Chunlan Mo, Zhijue Quan, Xing Guo, Changda Zheng, Shuan Pan, Junlin Liu. Efficient InGaN-based yellow-light-emitting diodes[J]. Photonics Research, 2019, 7(2): 144
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