Efficient InGaN-based yellow-light-emitting diodes

Fengyi Jiang; Jianli Zhang; Longquan Xu; Jie Ding; Guangxu Wang; Xiaoming Wu; Xiaolan Wang; Chunlan Mo; Zhijue Quan; Xing Guo; Changda Zheng; Shuan Pan; Junlin Liu

doi:10.1364/PRJ.7.000144

Journals >Photonics Research >Volume 7 >Issue 2 >Page 144 > Article

Photonics Research
Vol. 7, Issue 2, 144 (2019)

Efficient InGaN-based yellow-light-emitting diodes

Fengyi Jiang^1、*, Jianli Zhang^1、2, Longquan Xu^1、2, Jie Ding^1、2, Guangxu Wang^1、2, Xiaoming Wu^1、2, Xiaolan Wang^1、2, Chunlan Mo^1、2, Zhijue Quan^1、2, Xing Guo^1、2, Changda Zheng^1、2, Shuan Pan^1、2, and Junlin Liu^1、2、3

Author Affiliations

¹National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China

²Nanchang Yellow Green Lighting Company Limited, Nanchang 330096, China

³e-mail: liujunlin@ncu.edu.cn

show less

DOI: 10.1364/PRJ.7.000144 Cite this Article Set citation alerts

Fengyi Jiang, Jianli Zhang, Longquan Xu, Jie Ding, Guangxu Wang, Xiaoming Wu, Xiaolan Wang, Chunlan Mo, Zhijue Quan, Xing Guo, Changda Zheng, Shuan Pan, Junlin Liu. Efficient InGaN-based yellow-light-emitting diodes[J]. Photonics Research, 2019, 7(2): 144 Copy Citation Text

EndNote(RIS)

BibTex

Plain Text

show less

Cited By

Article index updated: Apr. 22, 2024

Citation counts are provided from Web of Science. The counts may vary by service, and are reliant on the availability of their data.