A high power semiconductor laser as the temperature-generating device is introduced. The laser pulse is sent out from the laser to generate a quasi-step temperature change signal on the calibrated thermocouple surface. The signal is detected simultaneously by a fast response infrared detector and a slow response calibrated thermocouple. The former value is used as the true value to calibrate the new dynamic calibration system of the latter. For test the fast response thermocouple, the response time of the temperature-generating device is needed to be calibrated. Thus a fast response photodiode is chosen as a photoelectric detector. A test method of the rise time of the laser is obtained through building a test circuit. And a high power semiconductor laser with 980 nm is tested and the results are given. Experiments show that the rise time of the high power semiconductor laser is at nanosecond level and the dynamic calibration of the thermocouple with time constant at microsecond level can be realized.