• Acta Photonica Sinica
  • Vol. 51, Issue 9, 0914005 (2022)
Yu SHANG*, Jie FAN, Haizhu WANG, Yonggang ZOU, and Xiaohui MA
Author Affiliations
  • State Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun 130022,China
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    DOI: 10.3788/gzxb20225109.0914005 Cite this Article
    Yu SHANG, Jie FAN, Haizhu WANG, Yonggang ZOU, Xiaohui MA. Fabrication Technology of Distributed Feedback Semiconductor Laser Based on Buried Metal Mask[J]. Acta Photonica Sinica, 2022, 51(9): 0914005 Copy Citation Text show less
    References

    [1] A J AGARWAL, M KUMAR, A K JAISWAL et al. Analysis to compensate dispersion in optical communication link using chirp grating. International Journal of Electronics &Computer, 2, 980-986(2013).

    [2] Lijun WANG, Yongqiang NING, Li QIN et al. Development of high power diode laser. Chinese Journal of Luminescence, 36, 1-19(2015).

    [3] N V GOLOVASTIKOV, D A BYKOV, L L DOSKOLOVICH et al. Spatiotemporal optical pulse transformation by a resonant diffraction grating. Journal of Experimental and Theoretical Physics, 121, 785-792(2015).

    [4] R ZHANG, Z L FU, L L GU et al. Terahertz quantum well photodetectors with reflection-grating couplers. Applied Physics Letters, 105, 231123(2014).

    [5] Ning AN, Xingwei HAN, Chengzhi LIU et al. Simulation analysis of 2μm InGaAsSb/AlGaAsSb laser diode with dual waveguide. Acta Photonica Sinica, 45, 0914001(2016).

    [6] S SPIEBERGER, M SCHIEMANGK, A WICHT et al. DBR laser diodes emitting near 1064nm with an arrow intrinsic linewidth of 2kHz. Applied Physics B, 104, 813-818(2011).

    [7] C CHEN, L J ZHAO, J F QIU et al. Dual-wavelength distributed Bragg reflector semiconductor laser based on a composite resonant cavity. Chinese Physics B, 21, 094208(2012).

    [8] L Q YU, D LU, B W PAN et al. Widely tunable narrow-linewidth lasers using self-injection DBR lasers. IEEE Photonics Technology Letters, 27, 50-53(2015).

    [9] S SPIEBERGER, M SCHIEMANGK, A WICHT et al. Narrow linewidth DFB lasers emitting near a wavelength of 1064 nm. Journal of Lightwave Technology, 28, 2611-2616(2010).

    [10] H WENZEL, J FRIEKE, A KLEHR et al. High-power 980-nm DFB RW lasers with a narrow vertical far field. IEEE Photonics Technology Letters, 18, 737-739(2006).

    [11] Yang LI, Yuan FENG, Yang LI et al. Research progress of high power distributed feedback semiconductor lasers. Micronanoelectronic Technology, 55, 388-396(2018).

    [12] Yi LUO, Jin HUANG, Changheng SUN et al. Narrow linewidth semiconductor laser device. Infrared and Laser Engineering, 36, 147-151(2007).

    [13] A A BELYANIN, P M SMOWTON. Novel in-plane semiconductor lasers X, 11, 131102(2011).

    [14] J H KANG, H WENZEL, V HOFFMANN et al. DFB laser diodes based on GaN using 10th order laterally coupled surface gratings. IEEE Photonics Technology Letters, 30, 231-234(2018).

    [15] F GAO, L QIN, Y CHEN et al. Study of gain-coupled distributed feedback laser based on high order surface gain-coupled gratings. Optics Communications, 410, 936-940(2018).

    [16] Y X LEI, Y Y CHEN, F GAO et al. 990 nm high-power high-beam-quality DFB laser with narrow linewidth controlled by gain-coupled effect. IEEE Photonics Journal, 11, 1500609(2019).

    [17] Jun QI, Yonggang ZOU, Jie FAN et al. 1064nm lateral microstructure wide ridge waveguide semiconductor laser. Chinese Journal of Lasers, 48, 39-46(2021).

    [18] J M RONG, E B XING, Y ZHANG et al. Low lateral divergence 2μm InGaSb/ A1GaAsSb broad-area quantum well lasers. Optics Exprrss, 24, 7246-7252(2016).

    Yu SHANG, Jie FAN, Haizhu WANG, Yonggang ZOU, Xiaohui MA. Fabrication Technology of Distributed Feedback Semiconductor Laser Based on Buried Metal Mask[J]. Acta Photonica Sinica, 2022, 51(9): 0914005
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