With the development of semiconductor laser technology, surface grating semiconductor laser devices’ structure is becoming more complex. An independent micro nano process is often required to fabricate surface grating structures. There are some difficulties in the manufacturing process of ridge surface grating. Due to the ridge waveguide and other structures made in advance, the surface of epitaxial wafer presents a state of ups and downs, and the photoresist pattern edge as grating mask is prone to deformation, which destroys the grating morphology and affects the performance of grating. If the process scheme of etching the ridge waveguide first and then grating etching is adopted in the manufacturing process, the first etched ridge waveguide will make the surface of the epitaxial wafer uneven, resulting in uneven photoresist thickness after spin coating and damage the exposure pattern. Moreover, due to the uneven surface of the insulating dielectric layer produced after this process, it is difficult to corrode the insulating layer on the grating when corroding the insulating layer to form the electrode window, which will eventually affect the carrier injection and damage the output power of the semiconductor laser. Therefore, in the fabrication process of surface grating semiconductor laser, the fabrication process of surface grating is usually carried out first. However, this requires additional grating protection to avoid the subsequent device process damaging the grating structure, which will make the device preparation process cumbersome and not conducive to the preparation. In addition, during the subsequent fabrication of ridge waveguide, it is necessary to homogenize the photoresist again to expose the ridge waveguide. During the homogenization, the photoresist on the surface of epitaxial sheet can not be evenly distributed due to the grating structure existing in advance, which will affect the exposure of ridge waveguide and further lead to the residual photoresist in the grating groove during development, which is difficult to remove after subsequent process steps, damage to the quality of the device. In this paper, a fabrication process of surface grating distributed feedback semiconductor laser based on a buried metal mask is proposed. This fabrication process can reduce the influence of device process on the grating structure without additional grating protection process. At the beginning of the process, a Ni-Au metal layer is fabricated on the surface of semiconductor epitaxial wafer to form a hard mask of surface grating. After the process of waveguide and passivation layer, the passivation layer on the surface of the waveguide is removed to form the electrode injection window and expose the buried Ni-Au metal mask. Under the blocking effect of buried Ni-Au metal mask and passivation layer, a surface grating structure is formed on the surface of waveguide by dry etching process. The high-order surface grating distributed feedback semiconductor laser diode with grating period of 10 μm is fabricated by the fabrication process. By stripping out the metal hard mask on the surface of the epitaxial wafer in advance and making the insulating dielectric layer first, and then etching the grating, the residual problem of SiO₂ insulating layer is avoided. Due to the solid texture of the metal hard mask, the morphology of the grating and wide strip ridge waveguide structure will be more intact than that of the photoresist mask, which expands the manufacturing process of surface grating distributed feedback semiconductor laser and is also conducive to the improvement of device performance. The experimental results show that, compared with the fabrication process using photoresist as surface grating mask, the fabrication process based on buried metal mask ensures the morphology of the surface grating and the periodic distribution of the refractive index in the surface grating. Therefore, the single longitudinal mode half height full width of the device is reduced from 0.56 nm to 0.23 nm, and an output power of 242 mW is obtained at 1 A. At the same time, the far-field spot of the device is intact and the beam quality is good. This fabrication process improve the morphology of the grating and enhance the spectral characteristics of the device effectively. The new device technology ensures the morphology of the fabricated grating and is conducive to the improvement of the performance of laser devices, it provides more flexible and diverse methods for the fabrication of the same type of devices.