Researching | Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devices

Journals >Acta Physica Sinica >Volume 69 >Issue 7 >Page 078501-1 > Article

Acta Physica Sinica
Vol. 69, Issue 7, 078501-1 (2020)

Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devices

Shi-Jian Dong¹, Hong-Xia Guo^{1、2、3、*}, Wu-Ying Ma³, Ling Lv⁴, Xiao-Yu Pan³, Zhi-Feng Lei², Shao-Zhong Yue¹, Rui-Jing Hao¹, An-An Ju¹, Xiang-Li Zhong¹, and Xiao-Ping Ouyang^1、3

Author Affiliations

¹School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China

²State Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component, CEPREI, Guangzhou 510610, China

³Northwest Institute of Nuclear Technology, Xi’an 710024, China

⁴Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, Ministry of Education, School of Microelectronics, Xidian University, Xi’an 710071, China

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DOI: 10.7498/aps.69.20191557 Cite this Article

Shi-Jian Dong, Hong-Xia Guo, Wu-Ying Ma, Ling Lv, Xiao-Yu Pan, Zhi-Feng Lei, Shao-Zhong Yue, Rui-Jing Hao, An-An Ju, Xiang-Li Zhong, Xiao-Ping Ouyang. Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devices[J]. Acta Physica Sinica, 2020, 69(7): 078501-1 Copy Citation Text

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References

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Shi-Jian Dong, Hong-Xia Guo, Wu-Ying Ma, Ling Lv, Xiao-Yu Pan, Zhi-Feng Lei, Shao-Zhong Yue, Rui-Jing Hao, An-An Ju, Xiang-Li Zhong, Xiao-Ping Ouyang. Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devices[J]. Acta Physica Sinica, 2020, 69(7): 078501-1

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