[1] Harman T C, Strauss A J, Dickey D H, et al. Low electron effective masses and energy gap in CdxHg1-xTe[J]. Phys. Rev. Lett. 1961, 7(11): 403-405.

[2] Scott M W. Energy gap in Hg1-xCdxTe by optical absorption [J]. J. Appl. Phys., 1969, 40(10):4077-4081.

[3] Elliott C T, Melngailisa I, Harman T C. Carrier freeze-out and acceptor energies in p-type Hg1-xCdxTe [J]. J. Phys. Chem. Sol., 1972,33(7-9), :1527-1531.

[4] Hansen G L, Schmit J L, Casselman T N. Energy gap versus alloy composition and temperature in Hg1-xCdxTe [J]. J. Appl. Phys., 1982, 53(10): 7099-7101.

[5] Phillips J D, Moazzami K, Kim J, et al. Uniformity of optical absorption in HgCdTe epilayer measured by infrared spectromicroscopy [J]. Appl. Phys. Lett. , 2003, 83(10): 3701-3703.

[6] Laurenti J P, Camassel J, Bouhemadou A, et al. Temperature dependence of the fundamental absorption edge of mercury cadmium telluride [J]. J. Appl. Phys., 1990, 67(10): 6454-6460.

[7] Chu J H, Xu S C, Tang D Y. Energy gap versus alloy composition and temperature in Hg1-xCdxTe [J]. Appl. Phys. Lett. , 1983, 43(11): 1064-1066.

[8] Chu J H, Li B, Liu K, et al. Empirical rule of intrinsic absorption spectroscopy in Hg1-xCdxTe [J]. J. Appl. Phys., 1994, 75(2): 1234-1235.

[10] Shao J, Lv X, Lu Wei, et al. Cutoff wavelength of Hg1-xCdxTe epilayers by infrared photoreflectance Spectroscopy [J]. Appl. Phys. Lett. ,2007, 90(17): 171101-171101-3.

[11] Yue F Y, Shao J, Lv X, et al. Anomalous temperature dependence of absorption edge in narrow-gap HgCdTe semiconductors [J]. Appl. Phys. Lett. ,2006, 89(2):021912.

[13] Stroscio J A, Feenstra R M, Fein A P. Electronic structure of the Si(111)2×1 surface by scanning tunneling mircoscopy [J]. Phys. Rev. Lett., 1986, 57(20): 2579-2582

[14] Jager N D, Ebert Ph, Urban K, et al. Scanning tunneling microscopy and spectroscopy of semi-insulating GaAs [J]. Phys. Rev. B., 2002, 65(19):195318-195318-8.

[16] Feenstra R M, Stroscio J A. Tunneling spectroscopy of the GaAs(110) surface [J]. J. Vac. Sci. Technol.B., 1987, 5(4):923-929.

[17] Feenstra R M. Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors [J]. Physical Review B, 1994, 50(7): 4561-4570.

[18] Shen X C, Chu J H. Low frequency phonon spectra of mixed crystal CdxHg1-xTe [J]. Solid State Communications, 1983, 48(12):1017-1021.

[19] Zha F X, Shao J, et al. “Blueshift” in photoluminescence and photovoltaic spectroscopy of the ion-milling formed n-on-p HgCdTe photodiodes [J]. Appl. Phys. Lett. , 2007, 90(20): 201112-201112-3.