• Journal of Infrared and Millimeter Waves
  • Vol. 36, Issue 4, 446 (2017)
YAO Chang-Fei*, CHEN Zhen-Hua, and GE Jun-Xiang
Author Affiliations
  • [in Chinese]
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    DOI: 10.11972/j.issn.1001-9014.2017.04.012 Cite this Article
    YAO Chang-Fei, CHEN Zhen-Hua, GE Jun-Xiang. ADevelopment of 330 GHz receiver front-end with GaAs Schottky diodes[J]. Journal of Infrared and Millimeter Waves, 2017, 36(4): 446 Copy Citation Text show less
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    [10] Thomas B, Alderman B, MathesonD, et al. A combined 380 GHz mixer/doubler circuit based on planar Schottky diodes[J]. IEEE Transaction on Microwave and Wireless Components Letters, 2008, 18(5): 353-355.

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    [16] Thomas B, Maestrini A, Gill J, et al. A broadband 835~900 GHz fundamental balanced mixer based on monolithic GaAs membrane Schottky diodes [J]. IEEE Transactions on Microwave Theory and Techniques, 2010, 58(7):1917-1924.

    [17] Siles J V, Maestrini A, Alderman B, et al. A single-waveguide in-phase power-combined frequency doubler at 190 GHz [J]. IEEE Transactions on Microwave and Wireless Components Letters, 2011, 21(6):332-334.

    [18] Maestrini A, Mehdi I, Siles J V,et al. Design and characterization of a room temperature all-solid-state electronic source tunable from 2.48 to 2.75 THz [J]. IEEE Transactions on Microwave Theory and Techniques, 2012, 2(2):177-185.

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    YAO Chang-Fei, CHEN Zhen-Hua, GE Jun-Xiang. ADevelopment of 330 GHz receiver front-end with GaAs Schottky diodes[J]. Journal of Infrared and Millimeter Waves, 2017, 36(4): 446
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