• Journal of Infrared and Millimeter Waves
  • Vol. 36, Issue 4, 446 (2017)
YAO Chang-Fei*, CHEN Zhen-Hua, and GE Jun-Xiang
Author Affiliations
  • [in Chinese]
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    DOI: 10.11972/j.issn.1001-9014.2017.04.012 Cite this Article
    YAO Chang-Fei, CHEN Zhen-Hua, GE Jun-Xiang. ADevelopment of 330 GHz receiver front-end with GaAs Schottky diodes[J]. Journal of Infrared and Millimeter Waves, 2017, 36(4): 446 Copy Citation Text show less

    Abstract

    A 310~330 GHz receiver front-end with Schottky diode was designed and tested. The receiver first stage is a subharmonic mixer (SHM). In order to lower conversion loss (CL) and improve receiver sensitivity, the diode parasitic parameters such as the air-bridges inductance and their mutual inductance were discussed. The diode RF, LO and IF port impedance were calculated with embedding analysis for circuit optimization. The simulated CL accuracy was improved. The LO sources was realized by a ×6×2 multiplying chain, in which the sextupler is a commercial active multiplying chip. The balanced doubler was realized by a anti-series Schottky diode mounted on a suspended line. The chain can generate 10 dBm output power at 165 GHz to pump the receiver SHM. The receiver second stage is a low noise IF amplifier for lowering system noise figure. In the frequency range of 310~330 GHz, the measured receiver noise figure is lower than 10.5 dB with a minimum value of 8.5 dB at 325 GHz. The receiver gain is (31±1) dB.
    YAO Chang-Fei, CHEN Zhen-Hua, GE Jun-Xiang. ADevelopment of 330 GHz receiver front-end with GaAs Schottky diodes[J]. Journal of Infrared and Millimeter Waves, 2017, 36(4): 446
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