Carrier lifetime of GeSn measured by spectrally resolved picosecond photoluminescence spectroscopy

Brian Julsgaard; Nils von den Driesch; Peter Tidemand-Lichtenberg; Christian Pedersen; Zoran Ikonic; Dan Buca

doi:10.1364/PRJ.385096

Journals >Photonics Research >Volume 8 >Issue 6 >Page 788 > Article

Photonics Research
Vol. 8, Issue 6, 788 (2020)

Carrier lifetime of GeSn measured by spectrally resolved picosecond photoluminescence spectroscopy

Brian Julsgaard^1、*, Nils von den Driesch^2、3, Peter Tidemand-Lichtenberg⁴, Christian Pedersen⁴, Zoran Ikonic⁵, and Dan Buca²

Author Affiliations

¹Department of Physics and Astronomy, Aarhus University, Ny Munkegade 120, DK-8000 Aarhus C, Denmark

²Peter Grünberg Institute 9 (PGI 9), Forschungszentrum Jülich, 52425 Jülich, Germany

³JARA-Institut Green IT, RWTH Aachen, Germany

⁴DTU Fotonik, Technical University of Denmark, Frederiksborgvej 399, DK-4000 Roskilde, Denmark

⁵Pollard Institute, School of Electronic and Electrical Engineering, University of Leeds, Leeds, UK

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DOI: 10.1364/PRJ.385096 Cite this Article Set citation alerts

Brian Julsgaard, Nils von den Driesch, Peter Tidemand-Lichtenberg, Christian Pedersen, Zoran Ikonic, Dan Buca. Carrier lifetime of GeSn measured by spectrally resolved picosecond photoluminescence spectroscopy[J]. Photonics Research, 2020, 8(6): 788 Copy Citation Text

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Abstract

We present an experimental setup capable of time-resolved photoluminescence spectroscopy for photon energies in the range of 0.51 to 0.56 eV with an instrument time response of 75 ps. The detection system is based on optical parametric three-wave mixing, operates at room temperature, has spectral resolving power, and is shown to be well suited for investigating dynamical processes in germanium-tin alloys. In particular, the carrier lifetime of a direct-bandgap

{Ge}_{1 ? x} {Sn}_{x}

film with concentration

x = 12.5 %

and biaxial strain

? 0.55 %

is determined to be

217 \pm 15 ps

at a temperature of 20 K. A room-temperature investigation indicates that the variation in this lifetime with temperature is very modest. The characteristics of the photoluminescence as a function of pump fluence are discussed.

Supplementary Materials

Visualization 1 | Reconstructed emission spectra of a germanium-tin alloy after pulsed laser excitation. The different colors refer to the absorbed number of photons per square centimeter according to the legend.