• Acta Physica Sinica
  • Vol. 68, Issue 20, 206101-1 (2019)
Tian-Li He1, Hong-Yuan Wei2、*, Cheng-Ming Li2, and Geng-Wei Li1、*
Author Affiliations
  • 1School of Science, China University of Geoscience, Beijing 100083, China
  • 2Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    DOI: 10.7498/aps.68.20190717 Cite this Article
    Tian-Li He, Hong-Yuan Wei, Cheng-Ming Li, Geng-Wei Li. Comparative study of n-GaN transition group refractory metal Ohmic electrode[J]. Acta Physica Sinica, 2019, 68(20): 206101-1 Copy Citation Text show less
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    Tian-Li He, Hong-Yuan Wei, Cheng-Ming Li, Geng-Wei Li. Comparative study of n-GaN transition group refractory metal Ohmic electrode[J]. Acta Physica Sinica, 2019, 68(20): 206101-1
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