• Infrared and Laser Engineering
  • Vol. 51, Issue 6, 20210980 (2022)
Lei Pang1、2、3, Yang Cheng2、3, Wu Zhao2、3, Shaoyang Tan2、3, Yintao Guo2、3, Bo Li2、3, Jun Wang1、2、3, and Dayong Zhou3
Author Affiliations
  • 1College of Electronics and Information Engineering, Sichuan University, Chengdu 610065, China
  • 2Suzhou Everbright Photonics Co., Ltd., Suzhou 215163, China
  • 3Gusu Laboratory of Materials, Suzhou 215123, China
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    DOI: 10.3788/IRLA20210980 Cite this Article
    Lei Pang, Yang Cheng, Wu Zhao, Shaoyang Tan, Yintao Guo, Bo Li, Jun Wang, Dayong Zhou. Mid-infrared quantum cascade laser grown by MOCVD at 4.6 µm[J]. Infrared and Laser Engineering, 2022, 51(6): 20210980 Copy Citation Text show less
    References

    [1] Fengqi Liu, Jinchuan Zhang, Junqi Liu, et al. Progress in quantum cascade lasers. Chinese Journal of Lasers, 47, 0701007(2020).

    [2] J Faist, F Capasso, DL Sivco, et al. Quantum cascade laser. Science, 264, 553-556(1994).

    [3] M Beck, D Hofstetter, T Aellen, et al. Continuous wave operation of a mid-infrared semiconductor laser at room temperature. Science, 295, 301-305(2002).

    [4] Y Bai, N Bandyopadhyay, S Tsao, et al. Room temperature quantum cascade lasers with 27% wall plug efficiency. Applied Physics Letters, 98, 125017(2011).

    [5] J S Roberts, R P Green, L R Wilson, et al. Quantum cascade lasers grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 83, 1921-1922(2003).

    [6] B Dan, J D Kirch, B Colin, et al. High-efficiency, high-power mid-infrared quantum cascade lasers [Invited]. Optical Materials Express, 8, 1378(2018).

    [7] T Fei, S Q Zhai, J C Zhang, et al. High power λ~8.5 μm quantum cascade laser grown by MOCVD operating continuous-wave up to 408 K. Journal of Semiconductors, 42, 112301(2021).

    [8] D Bour, M Troccoli, F Capasso, et al. Metalorganic vapor-phase epitaxy of room-temperature, low-threshold InGaAs/AlInAs quantum cascade lasers. Journal of Crystal Growth, 272, 526-530(2004).

    [9] A Evans, S R Darvish, S Slivken, et al. Buried heterostructure quantum cascade lasers with high continuous-wave wall plug efficiency. Applied Physics Letters, 91, 553(2007).

    [10] G Scarpa, P Lugli, N Ulbrich, et al. Non-equilibrium electronic distribution within one period of InP-based quantum cascade lasers. Semiconductor Science and Technology, 19, S342-S344(2004).

    [11] A Wittmann, A Hugi, E Gini, et al. Heterogeneous high-performance quantum-cascade laser sources for broad-band tuning. IEEE Journal of Quantum Electronics, 44, 1083-1088(2008).

    [12] J S Yu, S Slivken, M Razeghi, et al. Injector doping level-dependent continuous-wave operation of InP-based QCLs at λ~7.3 μm above room temperature. Semiconductor Science and Technology, 25, 125015(2010).

    Lei Pang, Yang Cheng, Wu Zhao, Shaoyang Tan, Yintao Guo, Bo Li, Jun Wang, Dayong Zhou. Mid-infrared quantum cascade laser grown by MOCVD at 4.6 µm[J]. Infrared and Laser Engineering, 2022, 51(6): 20210980
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