Mid-infrared quantum cascade laser has various application prospects in infrared countermeasures, trace gas detection, free space optical communication and other fields. The method of using MOCVD to grow quantum cascade lasers has the advantages of high production efficiency, convenience for regrowth and multi-components growth. This paper reported a mid-infrared quantum cascade laser capable of continuous-wave operation at room temperature, with a wavelength of 4.6 μm, using MOCVD to grow strain-compensated InGaAs/InAlAs materials. The experiment explored the impact of different doping on chip performance, and determined that the device performance can be improved by optimizing the doping concentration. The maximum peak power of the chip with a cavity length of 3 mm and a ridge width of 13 μm in pulse mode was 722 mW at a temperature of 288K, the wall-plug efficiency and threshold current density were 6.3% and 1.04 kA/cm², respectively, and the power output reached 364 mW in continuous-wave operation. This article has successfully realized the growth of mid-infrared quantum cascade laser by MOCVD, which provides technical support for laser applications in the mid-infrared band.