Femtosecond Laser-Induced Damage on Ge-Sb-S Chalcogenide Glass

Tongtong Li; Mingjie Zhang; Kangzhen Tian; Xiang Zhang; Xiao Yuan; Anping Yang; Zhiyong Yang

doi:10.3788/AOS201939.1016001

Journals >Acta Optica Sinica >Volume 39 >Issue 10 >Page 1016001 > Article

Acta Optica Sinica
Vol. 39, Issue 10, 1016001 (2019)

Femtosecond Laser-Induced Damage on Ge-Sb-S Chalcogenide Glass

Tongtong Li¹, Mingjie Zhang¹, Kangzhen Tian¹, Xiang Zhang^2、3, Xiao Yuan^2、3, Anping Yang¹, and Zhiyong Yang^{1、2、3、*}

Author Affiliations

¹Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou, Jiangsu 221116, China

²School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu 215006, China

³Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou, Jiangsu 215006, China

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DOI: 10.3788/AOS201939.1016001 Cite this Article Set citation alerts

Tongtong Li, Mingjie Zhang, Kangzhen Tian, Xiang Zhang, Xiao Yuan, Anping Yang, Zhiyong Yang. Femtosecond Laser-Induced Damage on Ge-Sb-S Chalcogenide Glass[J]. Acta Optica Sinica, 2019, 39(10): 1016001 Copy Citation Text

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Fig. 1. Experimental setup diagram of fs LDT test

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Evolution of LDT of Ge-Sb-S glass. (a) Correlation between LDT of Ge0.3Sb0.1S0.6 glass and repetition rate of irradiating pulse; (b) correlation between composition and LDT of GexSb0.1S0.9-x glass; (c) correlation between composition and LDT of Ge0.15SbxS0.85-x glass

Fig. 2. Evolution of LDT of Ge-Sb-S glass. (a) Correlation between LDT of Ge_0.3Sb_0.1S_0.6 glass and repetition rate of irradiating pulse; (b) correlation between composition and LDT of Ge_xSb_0.1S_0.9-_x glass; (c) correlation between composition and LDT of Ge_0.15Sb_xS_0.85-_x glass

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Fig. 3. SEM images of damaged areas on Ge_0.3Sb_0.1S_0.6 glass irradiated by fs-pulses with different repetition rates

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Composition	${d_{S}}_{}$ /%	LDT /(GW·cm^-2)
Composition	${d_{S}}_{}$ /%	1000 kHz	100 kHz	10 kHz	1 kHz
Ge_0.15Sb_0.1S_0.75	30	21.5	82.6	429.4	2222.0
Ge_0.2Sb_0.1S_0.7	15	22.1	88.3	418.6	2400.6
Ge_0.25Sb_0.1S_0.65	0	31.6	140.8	505.4	2630.5
Ge_0.285Sb_0.1S_0.615	-10.5	10.7	71.8	418.4	1982.3
Ge_0.3Sb_0.1S_0.6	-15	9.9	65.9	370.8	1974.0
Ge_0.325Sb_0.1S_0.575	-22.5	9.7	54.0	284.7	1854.8
Ge_0.15Sb_0.15S_0.7	17.5	21.8	86.6	432.9	2374.1
Ge_0.15Sb_0.2S_0.65	5	22.6	100.0	435.5	2480.9
Ge_0.15Sb_0.22S_0.63	0	24.2	103.5	447.3	2531.3
Ge_0.15Sb_0.25S_0.6	-7.5	11.4	72.2	424.5	2114.3
Ge_0.15Sb_0.28S_0.57	-15	9.8	57.4	290.8	1931.9

Table 1. LDTs of Ge-Sb-S glasses irradiated by laser with central wavelength of 1030 nm, pulse width of 216 fs, and repetition rate of 1-1000 kHz

Repetition rate /kHz	Position	Molar fraction /%
Repetition rate /kHz	Position	Ge	Sb	S	O
1	Damaged	30.2	10.1	55.4	4.3
1	Undamaged	30.2	10.3	59.5	0
10	Damaged	31.0	9.9	52.9	6.2
10	Undamaged	30.4	10.3	59.3	0
100	Damaged	31.6	8.9	51.8	7.7
100	Undamaged	30.2	10.2	59.4	0
1000	Damaged	32.1	8.1	48.7	11.1
1000	Undamaged	30.2	10.1	59.7	0

Table 2. Composition of damaged area on Ge_0.3Sb_0.1S_0.6 glass surface exposed to fs-pulses with different repetition rates

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