• Chinese Optics Letters
  • Vol. 19, Issue 7, 071402 (2021)
Songqing Zha1、2, Yujin Chen1、*, Bingxuan Li1、3, Yanfu Lin1, Wenbin Liao1, Yuqi Zou4, Chenghui Huang1, Zhanglang Lin1, and Ge Zhang1、3、5、**
Author Affiliations
  • 1Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
  • 2Fuzhou University, Fuzhou 350002, China
  • 3Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
  • 4Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
  • 5Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Device, Fuzhou 350108, China
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    DOI: 10.3788/COL202119.071402 Cite this Article Set citation alerts
    Songqing Zha, Yujin Chen, Bingxuan Li, Yanfu Lin, Wenbin Liao, Yuqi Zou, Chenghui Huang, Zhanglang Lin, Ge Zhang. High-repetition-rate 1.5 µm passively Q-switched Er:Yb:YAl3(BO3)4 microchip laser[J]. Chinese Optics Letters, 2021, 19(7): 071402 Copy Citation Text show less
    Material properties of the laser crystal and SA. (a) Polarized absorption spectra of the Er:Yb:YAB crystal and (b) transmission spectrum TSA of the employed Co2+: MgAl2O4 crystal.
    Fig. 1. Material properties of the laser crystal and SA. (a) Polarized absorption spectra of the Er:Yb:YAB crystal and (b) transmission spectrum TSA of the employed Co2+: MgAl2O4 crystal.
    Experimental setup for the PQS Er:Yb:YAB microchip laser.
    Fig. 2. Experimental setup for the PQS Er:Yb:YAB microchip laser.
    Microchip laser pumped by a CW LD. (a) Average output power and pulse energy and (b) pulse repetition rate and pulse duration versus incident pump power.
    Fig. 3. Microchip laser pumped by a CW LD. (a) Average output power and pulse energy and (b) pulse repetition rate and pulse duration versus incident pump power.
    Microchip laser operated at the incident power of 6.3 W. (a) Pulse train profile and the pulse repetition rate. (b) Single-pulse profile and pulse duration; the inset shows the laser spectrum.
    Fig. 4. Microchip laser operated at the incident power of 6.3 W. (a) Pulse train profile and the pulse repetition rate. (b) Single-pulse profile and pulse duration; the inset shows the laser spectrum.
    Energy level structure and main transitions in the Er:Yb:YAB laser.
    Fig. 5. Energy level structure and main transitions in the Er:Yb:YAB laser.
    Microchip laser pumped by a QCW LD. (a) Average output power and pulse energy and (b) pulse repetition rate and pulse duration versus pump peak power.
    Fig. 6. Microchip laser pumped by a QCW LD. (a) Average output power and pulse energy and (b) pulse repetition rate and pulse duration versus pump peak power.
    Microchip laser operated at the QCW pump power of 20 W. (a) Pulse train profile and the pulse repetition rate. (b) Single-pulse profile and pulse duration; the inset shows the laser spectrum.
    Fig. 7. Microchip laser operated at the QCW pump power of 20 W. (a) Pulse train profile and the pulse repetition rate. (b) Single-pulse profile and pulse duration; the inset shows the laser spectrum.
    Songqing Zha, Yujin Chen, Bingxuan Li, Yanfu Lin, Wenbin Liao, Yuqi Zou, Chenghui Huang, Zhanglang Lin, Ge Zhang. High-repetition-rate 1.5 µm passively Q-switched Er:Yb:YAl3(BO3)4 microchip laser[J]. Chinese Optics Letters, 2021, 19(7): 071402
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