High-repetition-rate 1.5 &#181;m passively Q-switched Er:Yb:YAl3(BO3)4 microchip laser

Songqing Zha; Yujin Chen; Bingxuan Li; Yanfu Lin; Wenbin Liao; Yuqi Zou; Chenghui Huang; Zhanglang Lin; Ge Zhang

doi:10.3788/COL202119.071402

Journals >Chinese Optics Letters >Volume 19 >Issue 7 >Page 071402 > Article

Chinese Optics Letters
Vol. 19, Issue 7, 071402 (2021)

High-repetition-rate 1.5 µm passively Q-switched Er:Yb:YAl₃(BO₃)₄ microchip laser

Songqing Zha^1、2, Yujin Chen^1、*, Bingxuan Li^1、3, Yanfu Lin¹, Wenbin Liao¹, Yuqi Zou⁴, Chenghui Huang¹, Zhanglang Lin¹, and Ge Zhang^{1、3、5、**}

Author Affiliations

¹Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China

²Fuzhou University, Fuzhou 350002, China

³Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China

⁴Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

⁵Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Device, Fuzhou 350108, China

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DOI: 10.3788/COL202119.071402 Cite this Article Set citation alerts

Songqing Zha, Yujin Chen, Bingxuan Li, Yanfu Lin, Wenbin Liao, Yuqi Zou, Chenghui Huang, Zhanglang Lin, Ge Zhang. High-repetition-rate 1.5 µm passively Q-switched Er:Yb:YAl₃(BO₃)₄ microchip laser[J]. Chinese Optics Letters, 2021, 19(7): 071402 Copy Citation Text

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