Study on defects of Nd:GGG laser crystal

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 22 >Issue 4 >Page 574 > Article

Chinese Journal of Quantum Electronics
Vol. 22, Issue 4, 574 (2005)

Study on defects of Nd:GGG laser crystal

[in Chinese]^1、2、*, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, and [in Chinese]¹

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on defects of Nd:GGG laser crystal[J]. Chinese Journal of Quantum Electronics, 2005, 22(4): 574 Copy Citation Text

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Abstract

Nd:GGG laser crystal is one kind of important active material of solid state heat capacity laser. Nd:GGG laser crystals grown by using the Czochralski method were about 60mm in diameter. The macroscopical and microcosmic defects were studied with stress meter, polarization microscope, ESEM and chemical etching method. Reference could be afforded to improve growth technological parameter and grow good large diameter Nd:GGG laser crystals.

Keywords

dislocation material defect materials Nd:GGG crystal SSHCL stress birefringence

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