INFRARED MICROBOLOMETER OF LATERAL POLYSILICON p + p- n + JUNCTION BASED ON STANDARD CMOS PROCESSES

[in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 24 >Issue 3 >Page 227 > Article

Journal of Infrared and Millimeter Waves
Vol. 24, Issue 3, 227 (2005)

INFRARED MICROBOLOMETER OF LATERAL POLYSILICON p + p- n + JUNCTION BASED ON STANDARD CMOS PROCESSES

[in Chinese] and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese]. INFRARED MICROBOLOMETER OF LATERAL POLYSILICON p + p- n + JUNCTION BASED ON STANDARD CMOS PROCESSES[J]. Journal of Infrared and Millimeter Waves, 2005, 24(3): 227 Copy Citation Text

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References

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[3] Sooraj Karnik V, Miltiadis Hatalis K. Multiple Lateral polysilicon diodes as temperature sensors for chemical microreaction systems [J]. J. Appl. Phy., 2003, 42(3) :1200-1205.

[4] Greve D, Potyraj P, Guaman A. Field-enhanced emission and capture in polysilicon pn junctions [J]. Solid-State Electronics. 1985, 28(12) :1255-1261.

[5] Aziz A, Bonnaud O, Lhermite H. Lateral polysilicon pn diodes: current-voltage characteristics simulation between 200K and 400K using a numical approach [J]. IEEE Trans. On Elec. Dev. , 1994, 41(2) :204-211.

[6] Guillou D F, Santhanam S, Carley L R. Laminated, Sacrificial-poly MEMS technology in standard CMOS [J]. Sensors and Actuators A, 2000, 85:346-355.

[in Chinese], [in Chinese]. INFRARED MICROBOLOMETER OF LATERAL POLYSILICON p + p- n + JUNCTION BASED ON STANDARD CMOS PROCESSES[J]. Journal of Infrared and Millimeter Waves, 2005, 24(3): 227

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