P-TYPE ACTIVATION RESEARCH OF As-DOPING IN MBE HgCdTe FILMS

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 24 >Issue 2 >Page 81 > Article

Journal of Infrared and Millimeter Waves
Vol. 24, Issue 2, 81 (2005)

P-TYPE ACTIVATION RESEARCH OF As-DOPING IN MBE HgCdTe FILMS

[in Chinese]¹, [in Chinese]², [in Chinese]³, [in Chinese]³, [in Chinese]³, [in Chinese]³, and [in Chinese]²

Author Affiliations

¹[in Chinese]

²[in Chinese]

³[in Chinese]

show less

DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. P-TYPE ACTIVATION RESEARCH OF As-DOPING IN MBE HgCdTe FILMS[J]. Journal of Infrared and Millimeter Waves, 2005, 24(2): 81 Copy Citation Text

show less

References

[1] Wu O K; Kamath G S; Radford W A; etal. Chemical doping of HgCdTe by molecular-beam epitaxy [J]. J. Vac.Sci.Technol.;1990;A8(2):1034-1038.

[2] Arias J M; Shin S H; Cooper D E. P-type arsenic doping of CdTe and HgTe/CdTe superlattices grown by photoassisted and conventional molecular-beam epitaxy [J].J.Vac.Sci.Technol.; 1990;A8(2):1025-1033.

[3] Rogalski A . Dual-band infrared detectors[J]. SPIE;2000;3948: 17-30.

[5] He Li; Yang Jianrong; Wang Shanli; et al. A study of MBE growth and thermal annealing of p-type long wavelength HgCdTe [J]. J. Crystal. Growth; 1997;175/176:677-681.

[8] Kenworthy I; Capper P; Jones C L. Determination of acceptor ionisation in CdxHg1-xTe. [J] J.Semicond. Sci. Technol.; 1990;5:854-860.

Download Citation

Save the article for my favorites

Paper Information