P-TYPE ACTIVATION RESEARCH OF As-DOPING IN MBE HgCdTe FILMS

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 24 >Issue 2 >Page 81 > Article

Journal of Infrared and Millimeter Waves
Vol. 24, Issue 2, 81 (2005)

P-TYPE ACTIVATION RESEARCH OF As-DOPING IN MBE HgCdTe FILMS

[in Chinese]¹, [in Chinese]², [in Chinese]³, [in Chinese]³, [in Chinese]³, [in Chinese]³, and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

³[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. P-TYPE ACTIVATION RESEARCH OF As-DOPING IN MBE HgCdTe FILMS[J]. Journal of Infrared and Millimeter Waves, 2005, 24(2): 81 Copy Citation Text

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Abstract

The study on As 4-doped HgCdTe epilayers grown by MBE was presented. The electrical activation of arsenic impurities was achieved by annealing that caused As to occupy Te sites. By using the secondary ion mass spectrometry (SIMS) and Hall measurements on the in situ arsenic doped HgCdTe epilayers, the results show that P-type MBE HgCdTe can be obtained by doping with As 4 source and annealing with high temperature.

Keywords

anneal HgCdTe MBE As doping

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