Ultrahigh detectivity, high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect

Kai Wang; Xinjia Qiu; Zesheng Lv; Zhiyuan Song; Hao Jiang

doi:10.1364/PRJ.444444

Journals >Photonics Research >Volume 10 >Issue 1 >Page 111 > Article

Photonics Research
Vol. 10, Issue 1, 111 (2022)

Ultrahigh detectivity, high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect

Kai Wang^1、†, Xinjia Qiu^1、†, Zesheng Lv¹, Zhiyuan Song¹, and Hao Jiang^{1、2、3、*}

Author Affiliations

¹School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China

²State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

³Guangdong Engineering Technology R & D Center of Compound Semiconductors and Devices, Sun Yat-sen University, Guangzhou 510275, China

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DOI: 10.1364/PRJ.444444 Cite this Article Set citation alerts

Kai Wang, Xinjia Qiu, Zesheng Lv, Zhiyuan Song, Hao Jiang. Ultrahigh detectivity, high-speed and low-dark current AlGaN solar-blind heterojunction field-effect phototransistors realized using dual-float-photogating effect[J]. Photonics Research, 2022, 10(1): 111 Copy Citation Text

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