• Infrared and Laser Engineering
  • Vol. 47, Issue 1, 106001 (2018)
Xu Zuodong*, Zhang Jianmin, Lin Xinwei, and Shao Bibo
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/irla201847.0106001 Cite this Article
    Xu Zuodong, Zhang Jianmin, Lin Xinwei, Shao Bibo. Transient response degradation of HgCdTe photovoltaic detectors under irradiation of nanosecond laser[J]. Infrared and Laser Engineering, 2018, 47(1): 106001 Copy Citation Text show less
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    [3] Dai Yonghong, Liu Yanfei, Zhou Haotian, et al. Sensitivity testing and experiment of balanced photodetectors in the space coherent optical communication [J]. Infrared and Laser Engineering, 2015, 44(10): 3110-3116. (in Chinese)

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    [7] Hu Wei, Sun Xiaoquan, Dou Xian′an. Analysis of the negative voltage-response in the InGaAs p-i-n photodiode under mode-locked laser illumination [J]. Journal of Infrared and Millimeter Waves, 2015, 34(1): 36-40. (in Chinese)

    [8] Hu Wei, Dou Xian′an, Sun Xiaoquan. The analysis of the photo carriers of the InGaAs p-i-n photodiode response to the high optical injection [J]. Acta Photonica Sinica, 2014, 43(6): 0625001.

    [9] Cui Haoyang, Li Zhifeng, Ma Fajun, et al. Negative photovoltaic response in HgCdTe infrared photovoltaic detectors irradiated with picosecond pulsed laser [J]. Journal of Infrared and Millimeter Waves, 2009, 28(3): 161-164. (in Chinese)

    [10] Cui Haoyang, Zeng Jundong, Tang Nanyun, et al. Sduty of Schottky contact in HgCdTe infrared photovoltaic detectors [J]. Optical & Quantum Electronics, 2013, 45(7): 635-640.

    [11] Rogalski Antoni. Infrared Detectors [M]. Florida: CRC Press, 2011: 213-214.

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    Xu Zuodong, Zhang Jianmin, Lin Xinwei, Shao Bibo. Transient response degradation of HgCdTe photovoltaic detectors under irradiation of nanosecond laser[J]. Infrared and Laser Engineering, 2018, 47(1): 106001
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