Analysis of Factors Affecting the Flatness of On-Resistance for 30 V UMOS

ZHOU Xi; FENG Quanyuan

doi:10.13911/j.cnki.1004-3365.200378

Journals >Microelectronics >Volume 51 >Issue 3 >Page 424 > Article

Microelectronics
Vol. 51, Issue 3, 424 (2021)

Analysis of Factors Affecting the Flatness of On-Resistance for 30 V UMOS

ZHOU Xi and FENG Quanyuan

Author Affiliations

[in Chinese]

show less

DOI: 10.13911/j.cnki.1004-3365.200378 Cite this Article

ZHOU Xi, FENG Quanyuan. Analysis of Factors Affecting the Flatness of On-Resistance for 30 V UMOS[J]. Microelectronics, 2021, 51(3): 424 Copy Citation Text

show less

References

[1] ZHANG B, ZHANG W T, QIAO M, et al. Concept and design of super junction devices ［J］. J Semicond, 2018, 39(2): 5-16.

[9] MELKONYAN S V, ASRIYAN H V, SURMALYAN A V, et al. Electron mobility variance in the presence of an electric field ［C］ // 22nd ICNF. Montpellier, France. 2013: 1-4.

[10] GAMIZ F, JA L V, ROLDAN J B, et al. Influence of the doping profile on electron mobility in a MOSFET ［J］. IEEE Trans Elec Dev, 1996, 43(11): 2023-2025.

ZHOU Xi, FENG Quanyuan. Analysis of Factors Affecting the Flatness of On-Resistance for 30 V UMOS[J]. Microelectronics, 2021, 51(3): 424

Download Citation

Tools

Save the article for my favorites

Paper Information