• Journal of Semiconductors
  • Vol. 44, Issue 5, 054101 (2023)
Zhaohui Sun1, Yang Feng1, Peng Guo2, Zheng Dong1, Junyu Zhang3, Jing Liu4, Xuepeng Zhan1, Jixuan Wu1, and Jiezhi Chen1、*
Author Affiliations
  • 1School of Information Science and Engineering (ISE), Shandong University, Qingdao 266000, China
  • 2Shandong Sinochip Semiconductors Co. Ltd, Jinan 250101, China
  • 3Neumem Co., Ltd, Hefei 230088, China
  • 4Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
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    DOI: 10.1088/1674-4926/44/5/054101 Cite this Article
    Zhaohui Sun, Yang Feng, Peng Guo, Zheng Dong, Junyu Zhang, Jing Liu, Xuepeng Zhan, Jixuan Wu, Jiezhi Chen. Flash-based in-memory computing for stochastic computing in image edge detection[J]. Journal of Semiconductors, 2023, 44(5): 054101 Copy Citation Text show less
    (Color online) (a) Comparison between conventional and SC methods, SNs length =N bits. (b) Region of the image. (c) The stochastic computational element to realize image detection algorithmic in logic circuits. (d) Scaled addition realized by the OR gate, scaled subtraction, and absolute value calculation realized by the XOR gate. (e) The data processing flow chart in the proposed method.
    Fig. 1. (Color online) (a) Comparison between conventional and SC methods, SNs length =N bits. (b) Region of the image. (c) The stochastic computational element to realize image detection algorithmic in logic circuits. (d) Scaled addition realized by the OR gate, scaled subtraction, and absolute value calculation realized by the XOR gate. (e) The data processing flow chart in the proposed method.
    (Color online) (a) The NOR flash architecture for logic operation. (b)I–V curve for NOR flash array. (c) Memory window degradation by P/E cycling. (d) Read current fluctuations can be observed caused by RTN.
    Fig. 2. (Color online) (a) The NOR flash architecture for logic operation. (b)I–V curve for NOR flash array. (c) Memory window degradation by P/E cycling. (d) Read current fluctuations can be observed caused by RTN.
    (Color online) (a) BER comparison between the conventional method and SC method when the signal noise is considered. (b) Effects of simultaneous offset of device parametersVG/VD/Vth on BER. (c) RTN effects are ignorable on BER. (d) Add 10% noise in (b). (e) Under differentVG/VD conditions, effects of simultaneous 10% drift of three device parameters on BER(N = 2). (f) Effects ofVth shifts.
    Fig. 3. (Color online) (a) BER comparison between the conventional method and SC method when the signal noise is considered. (b) Effects of simultaneous offset of device parametersVG/VD/Vth on BER. (c) RTN effects are ignorable on BER. (d) Add 10% noise in (b). (e) Under differentVG/VD conditions, effects of simultaneous 10% drift of three device parameters on BER(N = 2). (f) Effects ofVth shifts.
    (Color online) (a) BER and (b) power consumption at variousVG/VD voltages whenN = 2.
    Fig. 4. (Color online) (a) BER and (b) power consumption at variousVG/VD voltages whenN = 2.
    xi1xi2VG (V)Vth (V)Device stateLogical value
    0034CLOSE0
    0132Sub-saturation1
    1102CLOSE0
    Table 0. XOR truth table (VD = 1 V).
    xi2Vth (V)Device stateLogical value
    04CLOSE0
    12Sub-saturation1
    Table 0. OR truth table (VG = 3 V,VD = 1 V).
    Zhaohui Sun, Yang Feng, Peng Guo, Zheng Dong, Junyu Zhang, Jing Liu, Xuepeng Zhan, Jixuan Wu, Jiezhi Chen. Flash-based in-memory computing for stochastic computing in image edge detection[J]. Journal of Semiconductors, 2023, 44(5): 054101
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