[1] Glenn T Hess, Thomas J Sanders. HgCdTe double layer heterojuction detector device [J]. SPIE, 2000, 4028:353-364
[2] Wenus J, Rutkowski, Rogalski A. Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes [J].SPIE, 2001, 4288:335-344
[3] Antoni Rogalski. Heterostructure HgCdTe photovoltaic detectors[J]. SPIE, 2001, 4355:1-14
[4] Rogalski A. Photovoltaic Detector in Infrared Photon Detectors [M]. USA: Washington, SPIE Optical Engineering Press, 1996, chap. 3
[5] Nemirovsky Y, Rosenfeld D, Adar R, et al. Tunneling and dark currents in HgCdTe photodiodes [J]. J. Vac. Sci.Technol. , 1989, A7(2): 528-535
[6] Kinch M A, Willardson R K, Beer A C. Metal Insulator Semiconductor Detectors in Semiconductors and Semimetals[M]. New York: Academic Press, 1981, 18(6)
[7] David Rosenfeld, Gad Bahir. A model for the trap-assisted tunneling mechanism in diffused n-p and implanted n + -p HgCdTe photodiodes [J]. IEEE Transactions on Electron Devices, 1992, 39(7): 1638-1645
[8] Dhar V, Ashokan R, Khan Z A D, et al. Analysis of the R0A product in n+ and n+-n-p Hg1-x CdxTe photodiodes[J]. Semicond. Sci. Technol. , 1996, 11:1077-1084
[9] Adar R. Spatial integration of direct band-to-band tunneling currents in general device structures[J]. IEEE Transactions on Electron Devices, 1992, 39(4): 976-981
[10] Dewames R E, Williams G M, Pasko J G, et al. Current generation mechanisms in small band Gap HgCdTe-p-n junctions fabricated by ion implantation [ J ]. Journal of Crystal Growth, 1988, 86:849-858
[11] Rogalski A. Infrared Detectors [ M ]. UK: Norwich, 2000,chap. 8
