• Infrared and Laser Engineering
  • Vol. 51, Issue 3, 20210944 (2022)
Ziyang Li1、2, Huasong Liu1、2, Peng Sun1、2, Xiao Yang1、2, Jinlin Bai1、2, Ying Xu1、2, Shiqi Yang1、2, Yiqin Ji1、2, and Jianzhong Su1、2
Author Affiliations
  • 1Tianjin Key Laboratory of Optical Thin Film, Tianjin Jinhang Institute of Technical Physics, Tianjin 300308, China
  • 2Wang Zhijiang Laser Innovation Center, Tianjin 300308, China
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    DOI: 10.3788/IRLA20210944 Cite this Article
    Ziyang Li, Huasong Liu, Peng Sun, Xiao Yang, Jinlin Bai, Ying Xu, Shiqi Yang, Yiqin Ji, Jianzhong Su. Design and preparation of laser/long-wave infrared dual-band antireflection thin-film[J]. Infrared and Laser Engineering, 2022, 51(3): 20210944 Copy Citation Text show less
    Spectrum of BaF2 substrate at 1064 nm: (a) Reflectance test curve and (b) transmittance test curve; Spectrum of BaF2 substrate at 8-12 μm: (c) Reflectance test curve and (d) transmittance test curve
    Fig. 1. Spectrum of BaF2 substrate at 1064 nm: (a) Reflectance test curve and (b) transmittance test curve; Spectrum of BaF2 substrate at 8-12 μm: (c) Reflectance test curve and (d) transmittance test curve
    (a) Curve of admittance of thin-film system with wavelength and (b) curve of reflectance of thin-film system with wavelength when λ0=2 000 nm and N=8
    Fig. 2. (a) Curve of admittance of thin-film system with wavelength and (b) curve of reflectance of thin-film system with wavelength when λ0=2 000 nm and N=8
    (a) Curve of admittance of thin-film system with wavelength and (b) Curve of reflectance of thin-film system with wavelength when λ0=1259 nm and N=8
    Fig. 3. (a) Curve of admittance of thin-film system with wavelength and (b) Curve of reflectance of thin-film system with wavelength when λ0=1259 nm and N=8
    Spectrum at 1064 nm: (a) Reflectance theoretical curve and (b) transmittance theoretical curve; Spectrum at 8-12 μm: (c) Reflectance theoretical curve and (d) transmittance theoretical curve
    Fig. 4. Spectrum at 1064 nm: (a) Reflectance theoretical curve and (b) transmittance theoretical curve; Spectrum at 8-12 μm: (c) Reflectance theoretical curve and (d) transmittance theoretical curve
    Compared spectrum at 1064 nm: (a) Reflectance test curve and (b) transmittance test curve; Compared spectrum at 8-12 μm: (c) Reflectance test curve and (d) transmittance test curve
    Fig. 5. Compared spectrum at 1064 nm: (a) Reflectance test curve and (b) transmittance test curve; Compared spectrum at 8-12 μm: (c) Reflectance test curve and (d) transmittance test curve
    ParameterTechnical requirements
    Substrate materialBaF2
    Incident angle/(°)0
    Working band/μm1.0648-12
    Transmittance≥93%≥95%
    Table 1. Technical requirements of the laser/long-wave infrared dual-band antireflection thin-film
    MaterialSubstrate temperature/℃Deposition rate/Å·s−1(1 Å=10−10 m) Ion beam voltage/V
    YbF31505140
    ZnS1508120
    Table 2. Film deposition process parameters
    Ziyang Li, Huasong Liu, Peng Sun, Xiao Yang, Jinlin Bai, Ying Xu, Shiqi Yang, Yiqin Ji, Jianzhong Su. Design and preparation of laser/long-wave infrared dual-band antireflection thin-film[J]. Infrared and Laser Engineering, 2022, 51(3): 20210944
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