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Journals >Journal of Semiconductors >Volume 44 >Issue 7 >Page 072804 > Article

Journal of Semiconductors
Vol. 44, Issue 7, 072804 (2023)

A large-area multi-finger β-Ga₂O₃ MOSFET and its self-heating effect

Xuanze Zhou^*, Guangwei Xu^*, and Shibing Long^**

Author Affiliations

School of Microelectronics, University of Science and Technology of China, Hefei 230026, China

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DOI: 10.1088/1674-4926/44/7/072804 Cite this Article

Xuanze Zhou, Guangwei Xu, Shibing Long. A large-area multi-finger β-Ga₂O₃ MOSFET and its self-heating effect[J]. Journal of Semiconductors, 2023, 44(7): 072804 Copy Citation Text

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References

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[2] H Dong, H W Xue, Q M He et al. Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material. J Semicond, 40, 011802(2019).

[3] A Kuramata, K Koshi, S Watanabe et al. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth. Jpn J Appl Phys, 55, 1202A2(2016).

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[5] Y T Yu, X Q Xiang, X Z Zhou et al. Device topological thermal management of β-Ga2O3 Schottky barrier diodes. Chin Phys B, 30, 067302(2021).

[6] M Higashiwaki, K Sasaki, A Kuramata et al. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates. Appl Phys Lett, 100, 013504(2012).

[7] H Y Liu, J N Li, Y J Lv et al. Improved electrical performance of lateral β-Ga2O3 MOSFETs utilizing slanted fin channel structure. Appl Phys Lett, 121, 202101(2022).

[8] A Bhattacharyya, P Ranga, S Roy et al. Multi-kV class β-Ga2O3 MESFETs with a lateral figure of merit up to 355 MW/cm². IEEE Electron Device Lett, 42, 1272(2021).

[9] X Z Zhou, Y J Ma, G W Xu et al. Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing. Appl Phys Lett, 121, 223501(2022).

[10] C L Wang, H Zhou, J C Zhang et al. Hysteresis-free and μs-switching of D/E-modes Ga2O3 hetero-junction FETs with the BV2/Ron, sp of 0.74/0.28 GW/cm2. Appl Phys Lett, 120, 112101(2022).

[11] X Zhou, Q Liu, W Hao et al. Normally-off β-Ga2O3 power heterojunction fieldeffect-transistor realized by p-NiO and recessed gate. IEEE 26th Int Symp Power Semiconductor Devices IC’s (ISPSD)(2022).

[12] S Kim, Y W Zhang, C Yuan et al. Thermal management of β-Ga2O3 current aperture vertical electron transistors. IEEE Trans Compon, Packag Manufact Technol, 11, 1171(2021).

[13] B Chatterjee, K Zeng, C D Nordquist et al. Device-level thermal management of gallium oxide field-effect transistors. IEEE Trans Compon Packag Manuf Technol, 9, 2352(2019).

[14] W H Xu, Y B Wang, T G You et al. First demonstration of waferscale heterogeneous integration of Ga2O3 MOSFETs on SiC and Si substrates by ion-cutting process. 2019 IEEE International Electron Devices Meeting (IEDM), 12(2019).

[15] J Noh, S Alajlouni, M J Tadjer et al. High performance β-Ga2O3 nano-membrane field effect transistors on a high thermal conductivity diamond substrate. IEEE J Electron Devices, 7, 914(2019).

[16] H Zhou, K Maize, J Noh et al. Thermodynamic studies of Ga2O3 nanomembrane field-effect transistors on a sapphire substrate. ACS Omega, 2, 7723(2017).

[17] B Chatterjee, W Li, K Nomoto et al. Thermal design of multi-fin Ga2O3 vertical transistors. Appl Phys Lett, 119, 103502(2021).

[18] N Kumar, D Vaca, C Joishi et al. Ultrafast thermoreflectance imaging and electrothermal modeling of β-Ga2O3 MESFETs. IEEE Electron Device Lett, 41, 641(2020).

[19] J Böcker, K Tetzner, S Heucke et al. Dispersion effects in on-state resistance of lateral Ga2O3 MOSFETs at 300 V switching. Electon Lett, 56, 838(2020).

[20] H H Gong, F Zhou, X X Yu et al. 70-μm-body Ga2O3 Schottky barrier diode with 1.48 K/W thermal resistance, 59 A surge current and 98.9% conversion efficiency. IEEE Electron Device Lett, 43, 773(2022).

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Xuanze Zhou, Guangwei Xu, Shibing Long. A large-area multi-finger β-Ga₂O₃ MOSFET and its self-heating effect[J]. Journal of Semiconductors, 2023, 44(7): 072804

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