On the polarization self-screening effect in multiple quantum wells for nitride-based near ultraviolet light-emitting diodes

Kangkai Tian; Chunshuang Chu; Jiamang Che; Hua Shao; Jianquan Kou; Yonghui Zhang; Zi-Hui Zhang; Tongbo Wei

doi:10.3788/COL201917.122301

Journals >Chinese Optics Letters >Volume 17 >Issue 12 >Page 122301 > Article

Chinese Optics Letters
Vol. 17, Issue 12, 122301 (2019)

On the polarization self-screening effect in multiple quantum wells for nitride-based near ultraviolet light-emitting diodes

Kangkai Tian^1、2, Chunshuang Chu^1、2, Jiamang Che^1、2, Hua Shao^1、2, Jianquan Kou^1、2, Yonghui Zhang^1、2, Zi-Hui Zhang^1、2、*, and Tongbo Wei^3、**

Author Affiliations

¹Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China

²Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China

³State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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DOI: 10.3788/COL201917.122301 Cite this Article Set citation alerts

Kangkai Tian, Chunshuang Chu, Jiamang Che, Hua Shao, Jianquan Kou, Yonghui Zhang, Zi-Hui Zhang, Tongbo Wei. On the polarization self-screening effect in multiple quantum wells for nitride-based near ultraviolet light-emitting diodes[J]. Chinese Optics Letters, 2019, 17(12): 122301 Copy Citation Text

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Schematic conduction band diagrams for: (a) Device I; (b) Device II, in which the distributions of polarization-induced interface sheet charges and the polarization-induced bulk charges are also shown. Ec represents the conduction band.

Fig. 1. Schematic conduction band diagrams for: (a) Device I; (b) Device II, in which the distributions of polarization-induced interface sheet charges and the polarization-induced bulk charges are also shown.

E_{c}

represents the conduction band.

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(a) Electric field profiles, (b) combined conduction band profiles, and (c) combined valence band profiles for Devices I and II. Data are collected at 30 A/cm2. Δφe and Δφh are both 14.75 meV.

Fig. 2. (a) Electric field profiles, (b) combined conduction band profiles, and (c) combined valence band profiles for Devices I and II. Data are collected at

30 {A / cm}^{2}

Δ φ_{e}

and

Δ φ_{h}

are both 14.75 meV.

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Fig. 3. (a) Calculated and (b) measured EL spectra for Devices I and II at the currents of

6 {A / cm}^{2}

and

30 {A / cm}^{2}

, respectively.

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Fig. 4. (a) Numerically computed and (b) experimentally measured light output power and peak emission wavelengths in terms of the current injection levels. Inset for Fig. 4(a) presents the calculated electron-hole overlap level in QW2 at different injection current density levels.

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Fig. 5. (a) Hole concentration profiles and (b) electron concentration profiles in the MQWs for Devices I and II at the current level of

30 {A / cm}^{2}

. Inset for Fig. 5(b) shows the normalized electron current density for Devices I and II at the current level of

30 {A / cm}^{2}

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Fig. 6. (a) Numerically computed light output power and (b) normalized electron current density for Devices I, II, and III. The electron current density is collected at