Kangkai Tian, Chunshuang Chu, Jiamang Che, Hua Shao, Jianquan Kou, Yonghui Zhang, Zi-Hui Zhang, Tongbo Wei, "On the polarization self-screening effect in multiple quantum wells for nitride-based near ultraviolet light-emitting diodes," Chin. Opt. Lett. 17, 122301 (2019)
- Chinese Optics Letters
- Vol. 17, Issue 12, 122301 (2019)
Fig. 1. Schematic conduction band diagrams for: (a) Device I; (b) Device II, in which the distributions of polarization-induced interface sheet charges and the polarization-induced bulk charges are also shown.
Fig. 2. (a) Electric field profiles, (b) combined conduction band profiles, and (c) combined valence band profiles for Devices I and II. Data are collected at
Fig. 3. (a) Calculated and (b) measured EL spectra for Devices I and II at the currents of
Fig. 4. (a) Numerically computed and (b) experimentally measured light output power and peak emission wavelengths in terms of the current injection levels. Inset for Fig. 4(a) presents the calculated electron-hole overlap level in QW2 at different injection current density levels.
Fig. 5. (a) Hole concentration profiles and (b) electron concentration profiles in the MQWs for Devices I and II at the current level of 5(b) shows the normalized electron current density for Devices I and II at the current level of
Fig. 6. (a) Numerically computed light output power and (b) normalized electron current density for Devices I, II, and III. The electron current density is collected at
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