On the polarization self-screening effect in multiple quantum wells for nitride-based near ultraviolet light-emitting diodes

Kangkai Tian; Chunshuang Chu; Jiamang Che; Hua Shao; Jianquan Kou; Yonghui Zhang; Zi-Hui Zhang; Tongbo Wei

doi:10.3788/COL201917.122301

Journals >Chinese Optics Letters >Volume 17 >Issue 12 >Page 122301 > Article

Chinese Optics Letters
Vol. 17, Issue 12, 122301 (2019)

On the polarization self-screening effect in multiple quantum wells for nitride-based near ultraviolet light-emitting diodes

Kangkai Tian^1、2, Chunshuang Chu^1、2, Jiamang Che^1、2, Hua Shao^1、2, Jianquan Kou^1、2, Yonghui Zhang^1、2, Zi-Hui Zhang^1、2、*, and Tongbo Wei^3、**

Author Affiliations

¹Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China

²Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China

³State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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DOI: 10.3788/COL201917.122301 Cite this Article Set citation alerts

Kangkai Tian, Chunshuang Chu, Jiamang Che, Hua Shao, Jianquan Kou, Yonghui Zhang, Zi-Hui Zhang, Tongbo Wei. On the polarization self-screening effect in multiple quantum wells for nitride-based near ultraviolet light-emitting diodes[J]. Chinese Optics Letters, 2019, 17(12): 122301 Copy Citation Text

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