Chenyang Wei, Qian Wang, Honglu Hou. Simulation and Experimental Study of Doping Properties of a Silicon Wafer Using Optical Cavity Ring-Down Measurement Method[J]. Laser & Optoelectronics Progress, 2023, 60(1): 0112005
- Laser & Optoelectronics Progress
- Vol. 60, Issue 1, 0112005 (2023)
Fig. 1. Measuring principle diagram of cavity ring-down (CRD) method containing semiconductor materials
Fig. 2. Transmission spectrum of cavity without sample
Fig. 3. Transmission spectrum of cavity with sample. (a) Different doping concentrations; (b) different thicknesses of sample
Fig. 4. Change of cavity transmission signal along with sample. (a) Different doping concentrations; (b) different thicknesses of sample
Fig. 5. CRD signals with and without sample. (a) Normalized signal; (b) logarithmic graph
Fig. 6. Dependences of CRD time on different parameters. (a) Cavity length
Fig. 7. Optical circuit diagram of optical feedback CRD technology
Fig. 8. Experimental results after adding threshold circuit. (a) Input voltage of laser; (b) typical CRD signal
Fig. 9. CRD signals and fitting results with and without sample
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Table 1. Measured results of doping concentration of sample
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Table 2. Measured results of resistivity of sample
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