Yuxuan Li, Xiaobin Liu, Xuetong Li, Lanxuan Zhang, Baisong Chen, Zihao Zhi, Xueyan Li, Guowei Zhang, Peng Ye, Guanzhong Huang, Deyong He, Wei Chen, Fengli Gao, Pengfei Guo, Xianshu Luo, Guoqiang Lo, Junfeng Song. Germanium-on-silicon avalanche photodiode for 1550 nm weak light signal detection at room temperature[J]. Chinese Optics Letters, 2022, 20(6): 062501
- Chinese Optics Letters
- Vol. 20, Issue 6, 062501 (2022)
Fig. 1. Structure diagram of the lateral SACM Ge-on-Si APD.
Fig. 2. (a) Distribution of valence and conduction bands in the I1 region at -2 V and -9 V (Vex = 20%Vbr). (b) The electric field distribution in the Si substrate at -2 V and -9 V.
Fig. 3. (a) Photo-dark current of the SACM APD. (b) Avalanche probability simulation of the SACM APD.
Fig. 4. (a) Setup of the weak light signal detection experiment. The red lines are the optical paths, and the black ones represent the electrical paths. (b) Diagram of the device under test (DUT).
Fig. 5. (a) DCR of the detection system versus excess bias at 300 K. (b) DCR of the detection system versus repetition rate of gate pulse with 20% excess bias applied.
Fig. 6. (a) Detection efficiency η of the detection system versus excess bias at 300 K. (b) NEP of the detection system versus excess bias at 300 K.
Fig. 7. Histograms of the DUT at 20% excess bias.
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Table 1. Detection Performance of Ge-on-Si APD in Geiger Mode
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